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HY1807B-VB Product details
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Product Introduction:
HY1807B-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed to handle high current and high voltage applications, with a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) range of ±20V. It has a threshold voltage (Vth) of 3V and uses advanced trench technology, which makes HY1807B-VB excellent in low on-resistance and high current carrying capacity. Suitable for applications requiring high current handling capability and low power consumption.
HY1807B-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed to handle high current and high voltage applications, with a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) range of ±20V. It has a threshold voltage (Vth) of 3V and uses advanced trench technology, which makes HY1807B-VB excellent in low on-resistance and high current carrying capacity. Suitable for applications requiring high current handling capability and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description:
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules:
1. **High power switch**: The low on-resistance and high current capability of HY1807B-VB make it very suitable for high power switch applications, such as high-efficiency power switches and motor drive circuits. It is able to maintain low losses during the switching process, ensuring efficient operation of the system.
2. **Power management system**: In the field of power management, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice for switch mode power supplies (SMPS), DC-DC converters and high-efficiency regulators, helping to improve the overall efficiency and stability of the system.
3. **In-vehicle power system**: Suitable for applications such as battery management, power distribution and start-stop systems in automotive electronic systems, HY1807B-VB can remain stable under high load conditions, meeting the requirements of automotive electronics for high reliability and long life.
4. **Industrial motor control**: In industrial automation and motor control systems, HY1807B-VB can be used to control the start-up and operation of high-power motors, support high current loads, while ensuring efficient and stable performance.
HY1807B-VB, with its excellent electrical performance and high reliability, can provide reliable solutions in multiple fields requiring high power and high efficiency.
1. **High power switch**: The low on-resistance and high current capability of HY1807B-VB make it very suitable for high power switch applications, such as high-efficiency power switches and motor drive circuits. It is able to maintain low losses during the switching process, ensuring efficient operation of the system.
2. **Power management system**: In the field of power management, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice for switch mode power supplies (SMPS), DC-DC converters and high-efficiency regulators, helping to improve the overall efficiency and stability of the system.
3. **In-vehicle power system**: Suitable for applications such as battery management, power distribution and start-stop systems in automotive electronic systems, HY1807B-VB can remain stable under high load conditions, meeting the requirements of automotive electronics for high reliability and long life.
4. **Industrial motor control**: In industrial automation and motor control systems, HY1807B-VB can be used to control the start-up and operation of high-power motors, support high current loads, while ensuring efficient and stable performance.
HY1807B-VB, with its excellent electrical performance and high reliability, can provide reliable solutions in multiple fields requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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