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HY1804D-VB Product details
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HY1804D-VB MOSFET Product Introduction
HY1804D-VB is a single N-channel MOSFET in TO252 package, suitable for applications requiring high-efficiency switching and low on-resistance. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage range of ±20V, and a very low on-resistance (RDS(ON)), which is 6mΩ at VGS=4.5V and as low as 5mΩ at VGS=10V. With a maximum drain current (ID) of 85A and advanced trench technology, the HY1804D-VB provides excellent conduction performance and power handling capabilities, making it ideal for applications with high power density and strict efficiency requirements.
HY1804D-VB is a single N-channel MOSFET in TO252 package, suitable for applications requiring high-efficiency switching and low on-resistance. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage range of ±20V, and a very low on-resistance (RDS(ON)), which is 6mΩ at VGS=4.5V and as low as 5mΩ at VGS=10V. With a maximum drain current (ID) of 85A and advanced trench technology, the HY1804D-VB provides excellent conduction performance and power handling capabilities, making it ideal for applications with high power density and strict efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HY1804D-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management system**: HY1804D-VB is very suitable for DC-DC converters and power management modules (such as power supplies in servers and data centers) due to its low RDS(ON) and high ID. In these systems, this MOSFET can improve conversion efficiency and reduce power consumption.
2. **Automotive electronics**: In the field of automotive electronics, especially in motor drives and power distribution units for electric vehicles, HY1804D-VB can withstand higher currents and provide low losses, thereby achieving better thermal management and higher system reliability.
3. **Industrial control**: HY1804D-VB can be used for high-frequency switching and motor controllers in industrial control systems. These systems require the low on-resistance and fast switching capabilities of MOSFETs to ensure efficient operation and precise control of the system.
4. **Consumer Electronics**: In consumer electronics such as charging devices, laptops, and smartphone power adapters, the outstanding performance of the HY1804D-VB can help improve the charging efficiency of the products and reduce the losses in power conversion.
The versatility of this type of MOSFET makes it have a wide range of application potentials in many fields, especially in situations where efficiency and heat dissipation requirements are high.
1. **Power management system**: HY1804D-VB is very suitable for DC-DC converters and power management modules (such as power supplies in servers and data centers) due to its low RDS(ON) and high ID. In these systems, this MOSFET can improve conversion efficiency and reduce power consumption.
2. **Automotive electronics**: In the field of automotive electronics, especially in motor drives and power distribution units for electric vehicles, HY1804D-VB can withstand higher currents and provide low losses, thereby achieving better thermal management and higher system reliability.
3. **Industrial control**: HY1804D-VB can be used for high-frequency switching and motor controllers in industrial control systems. These systems require the low on-resistance and fast switching capabilities of MOSFETs to ensure efficient operation and precise control of the system.
4. **Consumer Electronics**: In consumer electronics such as charging devices, laptops, and smartphone power adapters, the outstanding performance of the HY1804D-VB can help improve the charging efficiency of the products and reduce the losses in power conversion.
The versatility of this type of MOSFET makes it have a wide range of application potentials in many fields, especially in situations where efficiency and heat dissipation requirements are high.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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