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HY1707U-VB Product details
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Product Introduction:
HY1707U-VB is a single N-channel MOSFET with a TO251 package type, which has excellent on-resistance characteristics and high current capability. This MOSFET can withstand a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, has a threshold voltage (Vth) of 3V, uses advanced trench technology, and is suitable for use in high-efficiency switching applications. It provides low on-resistance and high power density, and is suitable for demanding power supply and motor drive applications.
HY1707U-VB is a single N-channel MOSFET with a TO251 package type, which has excellent on-resistance characteristics and high current capability. This MOSFET can withstand a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, has a threshold voltage (Vth) of 3V, uses advanced trench technology, and is suitable for use in high-efficiency switching applications. It provides low on-resistance and high power density, and is suitable for demanding power supply and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter description:
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules:
1. **Motor drive**: With its low on-resistance and high current handling capability, HY1707U-VB is very suitable for brushless DC motor and stepper motor drive applications, which can effectively improve system efficiency and reduce power consumption.
2. **Power management**: In high-efficiency power converters and regulators, this MOSFET can achieve fast switching at low on-resistance and reduce energy loss, especially for switch mode power supplies (SMPS) and DC-DC converters.
3. **In-vehicle electronic equipment**: In automotive electronic systems, such as battery management systems (BMS), start-stop systems, and electric power steering systems, this MOSFET provides reliable high-power switching capabilities to meet the stringent requirements of automotive electronics for withstand voltage, on-resistance and current carrying capacity.
4. **Consumer electronics**: Suitable for consumer electronic devices that require efficient power conversion, such as high-performance power adapters and rechargeable battery management systems, to provide support for long-term stable operation.
The wide application of HY1707U-VB in these fields is due to its excellent electrical performance and compact packaging, and it has efficient and stable performance in power conversion and drive applications.
1. **Motor drive**: With its low on-resistance and high current handling capability, HY1707U-VB is very suitable for brushless DC motor and stepper motor drive applications, which can effectively improve system efficiency and reduce power consumption.
2. **Power management**: In high-efficiency power converters and regulators, this MOSFET can achieve fast switching at low on-resistance and reduce energy loss, especially for switch mode power supplies (SMPS) and DC-DC converters.
3. **In-vehicle electronic equipment**: In automotive electronic systems, such as battery management systems (BMS), start-stop systems, and electric power steering systems, this MOSFET provides reliable high-power switching capabilities to meet the stringent requirements of automotive electronics for withstand voltage, on-resistance and current carrying capacity.
4. **Consumer electronics**: Suitable for consumer electronic devices that require efficient power conversion, such as high-performance power adapters and rechargeable battery management systems, to provide support for long-term stable operation.
The wide application of HY1707U-VB in these fields is due to its excellent electrical performance and compact packaging, and it has efficient and stable performance in power conversion and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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