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HY1707D-VB Product details
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Product Introduction: HY1707D-VB
HY1707D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. The device uses advanced Trench technology to achieve extremely low on-resistance and excellent current handling capability, ensuring reliable performance in high-power electronic devices. With a drain-source voltage of up to 80V and a current carrying capacity of 75A, the HY1707D-VB is ideal for demanding power management and drive applications.
HY1707D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. The device uses advanced Trench technology to achieve extremely low on-resistance and excellent current handling capability, ensuring reliable performance in high-power electronic devices. With a drain-source voltage of up to 80V and a current carrying capacity of 75A, the HY1707D-VB is ideal for demanding power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and modules:
1. **Power management system**: The low on-resistance and high voltage characteristics of HY1707D-VB make it very suitable for various power management systems. It can effectively reduce energy loss in voltage regulation circuits and improve the overall efficiency and reliability of the system.
2. **DC-DC converter**: This MOSFET can be used as a high-efficiency switching element in DC-DC converters. Its low RDS(ON) and high current handling capability ensure minimum power consumption during the conversion process, and is suitable for various high-efficiency voltage conversion applications.
3. **Industrial motor drive**: HY1707D-VB is suitable for industrial motor drive circuits, providing stable current control to ensure that the motor can operate reliably under various loads. Its high current and voltage handling capabilities make it an ideal component in the field of industrial automation.
4. **Automotive electronic system**: In automotive electronic systems, this MOSFET can be used to control and manage power transmission. Its high current carrying capacity and low on-resistance enable it to effectively handle the power requirements of complex electrical systems, ensuring the safe and stable operation of vehicle electronic systems.
With its excellent electrical performance, HY1707D-VB is widely used in various power electronic systems that require high efficiency and high reliability, making it an ideal choice for power management, drive and conversion applications.
1. **Power management system**: The low on-resistance and high voltage characteristics of HY1707D-VB make it very suitable for various power management systems. It can effectively reduce energy loss in voltage regulation circuits and improve the overall efficiency and reliability of the system.
2. **DC-DC converter**: This MOSFET can be used as a high-efficiency switching element in DC-DC converters. Its low RDS(ON) and high current handling capability ensure minimum power consumption during the conversion process, and is suitable for various high-efficiency voltage conversion applications.
3. **Industrial motor drive**: HY1707D-VB is suitable for industrial motor drive circuits, providing stable current control to ensure that the motor can operate reliably under various loads. Its high current and voltage handling capabilities make it an ideal component in the field of industrial automation.
4. **Automotive electronic system**: In automotive electronic systems, this MOSFET can be used to control and manage power transmission. Its high current carrying capacity and low on-resistance enable it to effectively handle the power requirements of complex electrical systems, ensuring the safe and stable operation of vehicle electronic systems.
With its excellent electrical performance, HY1707D-VB is widely used in various power electronic systems that require high efficiency and high reliability, making it an ideal choice for power management, drive and conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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