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HY1707B-VB Product details
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HY1707B-VB MOSFET Product Introduction
HY1707B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The main features of this device are its 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS) tolerance and 3V threshold voltage (Vth). Its on-resistance (RDS(ON)) is extremely low, 4mΩ@VGS=10V, and the maximum continuous drain current (ID) is 150A. Thanks to advanced trench technology, the device excels in switching efficiency and thermal management, and is suitable for use in a variety of high-performance applications.
HY1707B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The main features of this device are its 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS) tolerance and 3V threshold voltage (Vth). Its on-resistance (RDS(ON)) is extremely low, 4mΩ@VGS=10V, and the maximum continuous drain current (ID) is 150A. Thanks to advanced trench technology, the device excels in switching efficiency and thermal management, and is suitable for use in a variety of high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package provides good heat dissipation, suitable for use in high-power applications, and is easy to integrate into surface mount circuits.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel MOSFET is turned on by applying a positive gate voltage in the application, has a fast switching response capability, and is particularly suitable for high-efficiency switching power supplies and power management applications.
3. **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, making this MOSFET suitable for use in medium-voltage applications, providing sufficient voltage margin to ensure safety.
4. **VGS (gate-source voltage)**: ±20V
- The tolerance of the gate-source voltage is ±20V, ensuring stable operation under various operating conditions and adapting to different control voltage ranges.
5. **Vth (Threshold Voltage)**: 3V
- The threshold voltage of 3V enables the device to switch quickly at low to medium voltages, ensuring efficient power transfer.
6. **RDS(ON) (On-Resistance)**: 4mΩ @ VGS=10V
- The on-resistance of only 4mΩ ensures minimal power loss when on, improving overall system efficiency, especially suitable for high current applications.
7. **ID (Continuous Drain Current)**: 150A
- The high continuous drain current capability of 150A enables it to handle high power and high current loads, making it ideal for applications that require high current output.
8. **Technology**: Trench Technology
- Advanced trench technology provides lower on-resistance and faster switching speeds, improving the overall efficiency and reliability of the device.
1. **Package**: TO263
- The TO263 package provides good heat dissipation, suitable for use in high-power applications, and is easy to integrate into surface mount circuits.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel MOSFET is turned on by applying a positive gate voltage in the application, has a fast switching response capability, and is particularly suitable for high-efficiency switching power supplies and power management applications.
3. **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, making this MOSFET suitable for use in medium-voltage applications, providing sufficient voltage margin to ensure safety.
4. **VGS (gate-source voltage)**: ±20V
- The tolerance of the gate-source voltage is ±20V, ensuring stable operation under various operating conditions and adapting to different control voltage ranges.
5. **Vth (Threshold Voltage)**: 3V
- The threshold voltage of 3V enables the device to switch quickly at low to medium voltages, ensuring efficient power transfer.
6. **RDS(ON) (On-Resistance)**: 4mΩ @ VGS=10V
- The on-resistance of only 4mΩ ensures minimal power loss when on, improving overall system efficiency, especially suitable for high current applications.
7. **ID (Continuous Drain Current)**: 150A
- The high continuous drain current capability of 150A enables it to handle high power and high current loads, making it ideal for applications that require high current output.
8. **Technology**: Trench Technology
- Advanced trench technology provides lower on-resistance and faster switching speeds, improving the overall efficiency and reliability of the device.
Domain and module applications：
Application Examples
HY1707B-VB MOSFET is suitable for many fields, especially in the following applications:
1. **Switching Power Supply and DC-DC Converter**:
- In switching power supply and DC-DC converter, HY1707B-VB can be used as a key switching element, its low on-resistance ensures efficient power conversion, while its high current handling capability can meet the needs of high-power applications.
2. **Motor Control and Drive**:
- HY1707B-VB is very suitable for use in motor control and drive systems, especially in industrial automation and electric vehicle applications, which can effectively control the start and stop and speed regulation of the motor to ensure the reliability and efficiency of the system.
3. **Power Tools and Home Appliances**:
- The device is also widely used in power tools and high-performance home appliances. Its high current handling capability and low loss characteristics help improve the overall performance and durability of the equipment.
4. **Battery Management System**:
- In the battery management system (BMS), HY1707B-VB can be used to control the battery charging and discharging process, provide safe and reliable high current management, and extend the battery life.
5. **Photovoltaic Inverter and UPS System**:
- In photovoltaic inverter and uninterruptible power supply (UPS) systems, HY1707B-VB can be used as a key power switching device. Its low loss characteristics help improve the energy efficiency of the overall system and ensure that losses are minimized during the power conversion process.
The high efficiency and reliability of HY1707B-VB MOSFET make it an ideal choice for a variety of applications that require high current handling capabilities and fast switching response.
HY1707B-VB MOSFET is suitable for many fields, especially in the following applications:
1. **Switching Power Supply and DC-DC Converter**:
- In switching power supply and DC-DC converter, HY1707B-VB can be used as a key switching element, its low on-resistance ensures efficient power conversion, while its high current handling capability can meet the needs of high-power applications.
2. **Motor Control and Drive**:
- HY1707B-VB is very suitable for use in motor control and drive systems, especially in industrial automation and electric vehicle applications, which can effectively control the start and stop and speed regulation of the motor to ensure the reliability and efficiency of the system.
3. **Power Tools and Home Appliances**:
- The device is also widely used in power tools and high-performance home appliances. Its high current handling capability and low loss characteristics help improve the overall performance and durability of the equipment.
4. **Battery Management System**:
- In the battery management system (BMS), HY1707B-VB can be used to control the battery charging and discharging process, provide safe and reliable high current management, and extend the battery life.
5. **Photovoltaic Inverter and UPS System**:
- In photovoltaic inverter and uninterruptible power supply (UPS) systems, HY1707B-VB can be used as a key power switching device. Its low loss characteristics help improve the energy efficiency of the overall system and ensure that losses are minimized during the power conversion process.
The high efficiency and reliability of HY1707B-VB MOSFET make it an ideal choice for a variety of applications that require high current handling capabilities and fast switching response.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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