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HY1607D-VB Product details
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Product Introduction: HY1607D-VB
HY1607D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. Based on advanced Trench technology, the device provides extremely low on-resistance and efficient current handling capability, making it excel in a variety of demanding power electronics applications. With high drain-source voltage (VDS) and strong current carrying capacity, HY1607D-VB is very suitable for high reliability and high efficiency power management applications.
HY1607D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. Based on advanced Trench technology, the device provides extremely low on-resistance and efficient current handling capability, making it excel in a variety of demanding power electronics applications. With high drain-source voltage (VDS) and strong current carrying capacity, HY1607D-VB is very suitable for high reliability and high efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules:
1. **Power Management Module**: The high voltage and low on-resistance characteristics of the HY1607D-VB make it ideal for use in power management modules. It can effectively control the flow of current, reduce power consumption and heat generation, and thus improve power conversion efficiency.
2. **DC-DC Converter**: In DC-DC converters, the low RDS(ON) and high current handling capabilities of this MOSFET ensure that power is minimized during the conversion process. The HY1607D-VB can be used in voltage converter applications that require high efficiency and high reliability.
3. **Motor Drive System**: The HY1607D-VB is suitable for industrial and automotive motor drive systems, providing stable current control and efficient energy transfer. Its high voltage and current carrying capabilities make it an ideal choice for motor drive circuits.
4. **Solar Inverter**: In solar power generation systems, this MOSFET can efficiently handle the current conversion of the inverter. The high current handling capability and low on-resistance of the HY1607D-VB help improve the inverter conversion efficiency and ensure long-term reliable operation of the system.
The HY1607D-VB is a MOSFET with excellent performance in high voltage and high current applications, and is very suitable for a variety of power electronic systems that require high efficiency and high reliability.
1. **Power Management Module**: The high voltage and low on-resistance characteristics of the HY1607D-VB make it ideal for use in power management modules. It can effectively control the flow of current, reduce power consumption and heat generation, and thus improve power conversion efficiency.
2. **DC-DC Converter**: In DC-DC converters, the low RDS(ON) and high current handling capabilities of this MOSFET ensure that power is minimized during the conversion process. The HY1607D-VB can be used in voltage converter applications that require high efficiency and high reliability.
3. **Motor Drive System**: The HY1607D-VB is suitable for industrial and automotive motor drive systems, providing stable current control and efficient energy transfer. Its high voltage and current carrying capabilities make it an ideal choice for motor drive circuits.
4. **Solar Inverter**: In solar power generation systems, this MOSFET can efficiently handle the current conversion of the inverter. The high current handling capability and low on-resistance of the HY1607D-VB help improve the inverter conversion efficiency and ensure long-term reliable operation of the system.
The HY1607D-VB is a MOSFET with excellent performance in high voltage and high current applications, and is very suitable for a variety of power electronic systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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