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HY1607B-VB Product details
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HY1607B-VB MOSFET Product Introduction
HY1607B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 3V. It uses advanced trench technology, has an extremely low on-resistance (RDS(ON)) of 4mΩ@VGS=10V, and supports a drain current (ID) of up to 150A. Its excellent conduction performance and high current handling capability make it suitable for use in a variety of applications requiring high performance and reliability.
HY1607B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 3V. It uses advanced trench technology, has an extremely low on-resistance (RDS(ON)) of 4mΩ@VGS=10V, and supports a drain current (ID) of up to 150A. Its excellent conduction performance and high current handling capability make it suitable for use in a variety of applications requiring high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package is a surface mount package with good heat dissipation performance and is suitable for high power applications.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel MOSFET turns on when a positive gate voltage is applied, providing efficient switching performance, which is very suitable for switching power supplies and current control applications.
3. **VDS (Drain-Source Voltage)**: 60V
- The maximum drain-source voltage of this MOSFET is 60V, which is suitable for applications that handle medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The gate-source voltage tolerance of ±20V ensures safety and stability under various operating conditions.
5. **Vth（Threshold Voltage）**: 3V
- The 3V threshold voltage provides stable on-state characteristics, allowing the device to respond quickly at moderate voltages.
6. **RDS(ON)（On-resistance）**: 4mΩ @ VGS=10V
- The extremely low on-resistance reduces switching losses, improves overall efficiency, and is very suitable for high current applications.
7. **ID（Continuous Drain Current）**: 150A
- The maximum continuous drain current is 150A, allowing it to withstand high current loads and is suitable for high power circuits.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching speed, improving the overall efficiency and reliability of the device.
1. **Package**: TO263
- The TO263 package is a surface mount package with good heat dissipation performance and is suitable for high power applications.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel MOSFET turns on when a positive gate voltage is applied, providing efficient switching performance, which is very suitable for switching power supplies and current control applications.
3. **VDS (Drain-Source Voltage)**: 60V
- The maximum drain-source voltage of this MOSFET is 60V, which is suitable for applications that handle medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The gate-source voltage tolerance of ±20V ensures safety and stability under various operating conditions.
5. **Vth（Threshold Voltage）**: 3V
- The 3V threshold voltage provides stable on-state characteristics, allowing the device to respond quickly at moderate voltages.
6. **RDS(ON)（On-resistance）**: 4mΩ @ VGS=10V
- The extremely low on-resistance reduces switching losses, improves overall efficiency, and is very suitable for high current applications.
7. **ID（Continuous Drain Current）**: 150A
- The maximum continuous drain current is 150A, allowing it to withstand high current loads and is suitable for high power circuits.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching speed, improving the overall efficiency and reliability of the device.
Domain and module applications：
Application Examples
HY1607B-VB MOSFET has a wide range of applications in multiple fields and modules, and is particularly suitable for the following scenarios:
1. **Electric Vehicle (EV) Battery Management System**:
- In the battery management system of electric vehicles, HY1607B-VB can be used to control and manage the battery charging and discharging process, provide stable high current handling capabilities, and ensure the efficiency and safety of the battery system.
2. **High-efficiency DC-DC Converter**:
- This MOSFET is suitable for the switching element of high-efficiency DC-DC converters. The low on-resistance and high current handling capability help improve power conversion efficiency and reduce energy loss. It is suitable for portable electronic devices and power systems.
3. **Motor Drive and Control System**:
- In the motor drive and control system, HY1607B-VB can be used to control the start and stop and speed regulation of high-power motors, suitable for motor control modules in industrial automation and power tools.
4. **Solar Inverter**:
- In solar inverter, HY1607B-VB can be used as a switching element to convert DC to AC. Low loss and high current carrying capacity ensure high efficiency and reliability of the system, which is suitable for home and industrial photovoltaic systems.
5. **Uninterruptible Power Supply (UPS) System**:
- In the uninterruptible power supply system, HY1607B-VB MOSFET can be used to switch power input to ensure that the system can still provide stable power supply when the power is off. Its high current handling capacity is very suitable for such applications.
The high efficiency and high reliability of HY1607B-VB MOSFET make it an indispensable key component in the above fields.
HY1607B-VB MOSFET has a wide range of applications in multiple fields and modules, and is particularly suitable for the following scenarios:
1. **Electric Vehicle (EV) Battery Management System**:
- In the battery management system of electric vehicles, HY1607B-VB can be used to control and manage the battery charging and discharging process, provide stable high current handling capabilities, and ensure the efficiency and safety of the battery system.
2. **High-efficiency DC-DC Converter**:
- This MOSFET is suitable for the switching element of high-efficiency DC-DC converters. The low on-resistance and high current handling capability help improve power conversion efficiency and reduce energy loss. It is suitable for portable electronic devices and power systems.
3. **Motor Drive and Control System**:
- In the motor drive and control system, HY1607B-VB can be used to control the start and stop and speed regulation of high-power motors, suitable for motor control modules in industrial automation and power tools.
4. **Solar Inverter**:
- In solar inverter, HY1607B-VB can be used as a switching element to convert DC to AC. Low loss and high current carrying capacity ensure high efficiency and reliability of the system, which is suitable for home and industrial photovoltaic systems.
5. **Uninterruptible Power Supply (UPS) System**:
- In the uninterruptible power supply system, HY1607B-VB MOSFET can be used to switch power input to ensure that the system can still provide stable power supply when the power is off. Its high current handling capacity is very suitable for such applications.
The high efficiency and high reliability of HY1607B-VB MOSFET make it an indispensable key component in the above fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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