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HY1607AB-VB Product details
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1. HY1607AB-VB Product Introduction
HY1607AB-VB is a single-channel N-type MOSFET in TO263 package with 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). This MOSFET adopts Trench technology, providing extremely low on-resistance, with RDS(ON) of 4mΩ at VGS of 10V, and can handle up to 150A continuous drain current (ID). This design makes HY1607AB-VB very suitable for high-efficiency power management and high-current applications, especially in scenarios requiring high-efficiency conversion and low heat loss.
HY1607AB-VB is a single-channel N-type MOSFET in TO263 package with 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). This MOSFET adopts Trench technology, providing extremely low on-resistance, with RDS(ON) of 4mΩ at VGS of 10V, and can handle up to 150A continuous drain current (ID). This design makes HY1607AB-VB very suitable for high-efficiency power management and high-current applications, especially in scenarios requiring high-efficiency conversion and low heat loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HY1607AB-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Maximum pulsed drain current (IDM)**: 600A
- **Power consumption (PD)**: 300W
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 8200 pF (typical)
- **Gate charge (Qg)**: 180 nC (typical)
- **Reverse recovery time (trr)**: 100 ns (typical)
- **Package type**: TO263
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Maximum pulsed drain current (IDM)**: 600A
- **Power consumption (PD)**: 300W
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 8200 pF (typical)
- **Gate charge (Qg)**: 180 nC (typical)
- **Reverse recovery time (trr)**: 100 ns (typical)
Domain and module applications：
3. Application fields and module examples
The high current handling capability and low on-resistance of HY1607AB-VB make it widely used in the following fields and modules:
1. **Power management and switching power supply**: HY1607AB-VB excels in high-efficiency power management systems, especially for switching power supplies (SMPS) and DC-DC converters. Low RDS(ON) can reduce conduction losses and improve the conversion efficiency of the system, which is particularly suitable for use in data centers, server power supplies, and power modules for high-efficiency computing.
2. **Electric vehicles and battery management systems**: In electric vehicles and battery management systems, this MOSFET can handle high current demands and ensure efficient charging and discharging of batteries. It is suitable for electric vehicle drive circuits, charging modules, and battery protection circuits to help improve the endurance and safety of electric vehicles.
3. **Industrial control and motor drive**: HY1607AB-VB is suitable for industrial control and motor drive applications, such as inverters and servo drive systems. It can withstand high loads and transient currents, allowing these systems to operate stably at high power outputs while reducing heat and energy loss.
4. **Consumer and High-Performance Electronics**: In consumer and high-performance electronic devices that require high efficiency and high reliability, the HY1607AB-VB provides efficient current control. It is suitable for demanding applications such as high-performance computers, communication equipment, and graphics processing unit (GPU) power management.
The high current handling capability and low on-resistance of the HY1607AB-VB enable it to play an important role in a variety of high-power, high-efficiency applications, ensuring system reliability and long life.
The high current handling capability and low on-resistance of HY1607AB-VB make it widely used in the following fields and modules:
1. **Power management and switching power supply**: HY1607AB-VB excels in high-efficiency power management systems, especially for switching power supplies (SMPS) and DC-DC converters. Low RDS(ON) can reduce conduction losses and improve the conversion efficiency of the system, which is particularly suitable for use in data centers, server power supplies, and power modules for high-efficiency computing.
2. **Electric vehicles and battery management systems**: In electric vehicles and battery management systems, this MOSFET can handle high current demands and ensure efficient charging and discharging of batteries. It is suitable for electric vehicle drive circuits, charging modules, and battery protection circuits to help improve the endurance and safety of electric vehicles.
3. **Industrial control and motor drive**: HY1607AB-VB is suitable for industrial control and motor drive applications, such as inverters and servo drive systems. It can withstand high loads and transient currents, allowing these systems to operate stably at high power outputs while reducing heat and energy loss.
4. **Consumer and High-Performance Electronics**: In consumer and high-performance electronic devices that require high efficiency and high reliability, the HY1607AB-VB provides efficient current control. It is suitable for demanding applications such as high-performance computers, communication equipment, and graphics processing unit (GPU) power management.
The high current handling capability and low on-resistance of the HY1607AB-VB enable it to play an important role in a variety of high-power, high-efficiency applications, ensuring system reliability and long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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