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HY1606D-VB Product details
Back to previous pageProduct introduction：
1. HY1606D-VB Product Introduction
HY1606D-VB is a high-performance single N-channel MOSFET with a TO252 package. The device provides a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. Its threshold voltage (Vth) is 2.5V, ensuring that it can be effectively turned on at a lower gate-source voltage. HY1606D-VB is very suitable for a variety of applications requiring high efficiency and high power density, providing excellent performance and reliability.
HY1606D-VB is a high-performance single N-channel MOSFET with a TO252 package. The device provides a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. Its threshold voltage (Vth) is 2.5V, ensuring that it can be effectively turned on at a lower gate-source voltage. HY1606D-VB is very suitable for a variety of applications requiring high efficiency and high power density, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. HY1606D-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 58A
8. **Technology type**: Trench technology
1. **Package type**: TO252
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 58A
8. **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples
HY1606D-VB MOSFET is particularly outstanding in the following fields and modules due to its advantages in low on-resistance and high current handling capability:
1. **Power management system**: In power management applications such as DC-DC converters and AC-DC power supplies, this MOSFET can be used as an efficient switching element to optimize the efficiency of the power system and reduce energy loss. It is especially suitable for applications with high requirements for power conversion efficiency.
2. **Motor drive system**: In motor drive applications such as power tools and industrial motors, the device can provide stable current control to ensure efficient operation of the motor under high load conditions and reduce heat generation through low on-resistance.
3. **Load switch and protection circuit**: HY1606D-VB is suitable for load switch and circuit protection modules. It can provide stable switching operation to ensure effective protection of the circuit under overcurrent conditions. It is particularly suitable for power protection systems that require fast response.
4. **Automotive Electronics**: In automotive electronic systems, such as battery management systems and on-board chargers, this MOSFET can handle high current loads, provide reliable switching control, and improve the performance and durability of automotive electronic equipment.
These applications demonstrate the wide applicability of HY1606D-VB in a variety of fields requiring high power handling and high efficiency, especially in power management and motor drive applications.
HY1606D-VB MOSFET is particularly outstanding in the following fields and modules due to its advantages in low on-resistance and high current handling capability:
1. **Power management system**: In power management applications such as DC-DC converters and AC-DC power supplies, this MOSFET can be used as an efficient switching element to optimize the efficiency of the power system and reduce energy loss. It is especially suitable for applications with high requirements for power conversion efficiency.
2. **Motor drive system**: In motor drive applications such as power tools and industrial motors, the device can provide stable current control to ensure efficient operation of the motor under high load conditions and reduce heat generation through low on-resistance.
3. **Load switch and protection circuit**: HY1606D-VB is suitable for load switch and circuit protection modules. It can provide stable switching operation to ensure effective protection of the circuit under overcurrent conditions. It is particularly suitable for power protection systems that require fast response.
4. **Automotive Electronics**: In automotive electronic systems, such as battery management systems and on-board chargers, this MOSFET can handle high current loads, provide reliable switching control, and improve the performance and durability of automotive electronic equipment.
These applications demonstrate the wide applicability of HY1606D-VB in a variety of fields requiring high power handling and high efficiency, especially in power management and motor drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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