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HY1605U-VB Product details
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Product Introduction
**HY1605U-VB** is a high-performance N-channel MOSFET in TO251 package, designed for high current and medium voltage applications. Its Trench technology ensures low on-resistance and excellent switching performance, making it perform well in power conversion and control applications. This MOSFET supports up to 60V drain-source voltage (VDS) and 97A continuous drain current (ID), which is very suitable for power electronics applications that require high efficiency and high reliability.
**HY1605U-VB** is a high-performance N-channel MOSFET in TO251 package, designed for high current and medium voltage applications. Its Trench technology ensures low on-resistance and excellent switching performance, making it perform well in power conversion and control applications. This MOSFET supports up to 60V drain-source voltage (VDS) and 97A continuous drain current (ID), which is very suitable for power electronics applications that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter Description
1. **Package type (Package):** TO251, provides good heat dissipation performance, suitable for high-power applications with limited space.
2. **Configuration (Configuration):** Single-N-Channel, for unidirectional current control.
3. **Drain-source voltage (VDS):** 60V, suitable for medium voltage power management systems.
4. **Gate-source voltage (VGS):** ±20V, can adapt to different gate drive voltages, enhance system flexibility.
5. **Turn-on voltage (Vth):** 2.5V, moderate threshold voltage ensures that the MOSFET is stably turned on under common gate drive voltages.
6. **On-resistance (RDS(ON)):**
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
The extremely low on-resistance effectively reduces power loss and improves system efficiency.
7. **Continuous drain current (ID):** 97A, capable of handling high current loads, suitable for high-power applications.
8. **Technology:** Trench technology optimizes the device's conduction characteristics and switching efficiency.
1. **Package type (Package):** TO251, provides good heat dissipation performance, suitable for high-power applications with limited space.
2. **Configuration (Configuration):** Single-N-Channel, for unidirectional current control.
3. **Drain-source voltage (VDS):** 60V, suitable for medium voltage power management systems.
4. **Gate-source voltage (VGS):** ±20V, can adapt to different gate drive voltages, enhance system flexibility.
5. **Turn-on voltage (Vth):** 2.5V, moderate threshold voltage ensures that the MOSFET is stably turned on under common gate drive voltages.
6. **On-resistance (RDS(ON)):**
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
The extremely low on-resistance effectively reduces power loss and improves system efficiency.
7. **Continuous drain current (ID):** 97A, capable of handling high current loads, suitable for high-power applications.
8. **Technology:** Trench technology optimizes the device's conduction characteristics and switching efficiency.
Domain and module applications：
Application Fields and Modules
**HY1605U-VB** is suitable for multiple high-power and high-efficiency application scenarios. The following are some typical application fields:
1. **Power Tools:** In the power conversion of power tools, the high current handling capability and low on-resistance of HY1605U-VB ensure the high efficiency and reliability of the tools.
2. **Data Center Power Management:** Due to its excellent switching performance and high current capability, this MOSFET can be used in the power management modules of servers and storage devices to improve the power conversion efficiency.
3. **Load Switches:** HY1605U-VB is very suitable for use as a switching device for high-current loads. In the automotive and industrial control fields, it improves the stability of the system by providing low-loss and high-reliability switching functions.
4. **Power Adapters:** Using this MOSFET in high-power power adapters can effectively improve the power conversion efficiency, reduce the heat generated by the device, and extend the service life of the adapter.
5. **Battery Protection Modules:** The high current handling capability and low on-resistance of HY1605U-VB make it very suitable for use in the protection circuit of the battery pack, which can ensure the safety of the battery and extend its service life.
The design and performance characteristics of HY1605U-VB enable it to perform well in a variety of high-efficiency and high-power power management and conversion applications, and are widely used in multiple industrial and consumer electronics fields.
**HY1605U-VB** is suitable for multiple high-power and high-efficiency application scenarios. The following are some typical application fields:
1. **Power Tools:** In the power conversion of power tools, the high current handling capability and low on-resistance of HY1605U-VB ensure the high efficiency and reliability of the tools.
2. **Data Center Power Management:** Due to its excellent switching performance and high current capability, this MOSFET can be used in the power management modules of servers and storage devices to improve the power conversion efficiency.
3. **Load Switches:** HY1605U-VB is very suitable for use as a switching device for high-current loads. In the automotive and industrial control fields, it improves the stability of the system by providing low-loss and high-reliability switching functions.
4. **Power Adapters:** Using this MOSFET in high-power power adapters can effectively improve the power conversion efficiency, reduce the heat generated by the device, and extend the service life of the adapter.
5. **Battery Protection Modules:** The high current handling capability and low on-resistance of HY1605U-VB make it very suitable for use in the protection circuit of the battery pack, which can ensure the safety of the battery and extend its service life.
The design and performance characteristics of HY1605U-VB enable it to perform well in a variety of high-efficiency and high-power power management and conversion applications, and are widely used in multiple industrial and consumer electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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