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HY1603D-VB Product details
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Product Introduction: HY1603D-VB
HY1603D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium voltage and high current applications. It uses Trench technology, has extremely low on-resistance and low threshold voltage, and can provide efficient conduction performance at a lower gate-source voltage. HY1603D-VB is suitable for power electronics applications that require high current handling and high efficiency, especially for high-density circuits and high-power demand environments.
HY1603D-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium voltage and high current applications. It uses Trench technology, has extremely low on-resistance and low threshold voltage, and can provide efficient conduction performance at a lower gate-source voltage. HY1603D-VB is suitable for power electronics applications that require high current handling and high efficiency, especially for high-density circuits and high-power demand environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Continuous drain current (ID)**: 80A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules:
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current handling capability of the HY1603D-VB make it an excellent performer in switching power supply applications. As the main switching element, it can efficiently convert power, reduce power loss and heat, and improve the efficiency of the overall power system.
2. **Electric vehicle power management**: In the power management system of electric vehicles, this MOSFET can effectively control the current of the battery and motor. Its high current carrying capacity and low on-resistance ensure the stability and reliability of the power system.
3. **Industrial motor drive**: The HY1603D-VB is suitable for industrial motor drive systems and can provide efficient and stable current control. Its excellent current handling capability and low power consumption make it an ideal choice for industrial applications.
4. **Battery charger**: In a battery charger, this MOSFET can efficiently control the charging process. Its low on-resistance and high current carrying capacity ensure high efficiency and long life of the charger, making it suitable for various high-power battery charging applications.
The design of HY1603D-VB enables it to provide excellent performance in these medium voltage and high current applications, making it an ideal choice for various high-power and high-efficiency electronic systems.
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current handling capability of the HY1603D-VB make it an excellent performer in switching power supply applications. As the main switching element, it can efficiently convert power, reduce power loss and heat, and improve the efficiency of the overall power system.
2. **Electric vehicle power management**: In the power management system of electric vehicles, this MOSFET can effectively control the current of the battery and motor. Its high current carrying capacity and low on-resistance ensure the stability and reliability of the power system.
3. **Industrial motor drive**: The HY1603D-VB is suitable for industrial motor drive systems and can provide efficient and stable current control. Its excellent current handling capability and low power consumption make it an ideal choice for industrial applications.
4. **Battery charger**: In a battery charger, this MOSFET can efficiently control the charging process. Its low on-resistance and high current carrying capacity ensure high efficiency and long life of the charger, making it suitable for various high-power battery charging applications.
The design of HY1603D-VB enables it to provide excellent performance in these medium voltage and high current applications, making it an ideal choice for various high-power and high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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