中文
English
HY15P04D-VB Product details
Back to previous pageProduct introduction：
1. HY15P04D-VB Product Introduction
HY15P04D-VB is a high-performance single-channel P-type MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -2V. HY15P04D-VB uses Trench technology to provide low on-resistance, with an RDS(ON) of 15mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, and can handle a continuous drain current (ID) of up to -50A. This makes the HY15P04D-VB perform well in applications with high current and high efficiency requirements, especially for high-density circuit design and switch control of high-load circuits.
HY15P04D-VB is a high-performance single-channel P-type MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -2V. HY15P04D-VB uses Trench technology to provide low on-resistance, with an RDS(ON) of 15mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, and can handle a continuous drain current (ID) of up to -50A. This makes the HY15P04D-VB perform well in applications with high current and high efficiency requirements, especially for high-density circuit design and switch control of high-load circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. HY15P04D-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -50A
- **Maximum pulsed drain current (IDM)**: -200A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3200 pF (typical)
- **Reverse recovery time (trr)**: 150 ns (typical)
- **Package type**: TO252
- **Channel configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -50A
- **Maximum pulsed drain current (IDM)**: -200A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3200 pF (typical)
- **Reverse recovery time (trr)**: 150 ns (typical)
Domain and module applications：
III. Application Fields and Module Examples
The high current handling capability and low on-resistance of the HY15P04D-VB enable it to excel in the following fields and modules:
1. **Power Management and Switching Power Supply**: In power management systems, especially in applications that need to handle high currents, the HY15P04D-VB can provide efficient switching control and optimize power conversion efficiency. It is suitable for high-power power converters and regulators, especially in data centers and industrial power modules.
2. **Electric Vehicle (EV) Charging System**: In electric vehicle charging systems, this MOSFET can handle high currents and high loads, supporting an efficient charging process. Its high current and low on-resistance characteristics can improve the efficiency and reliability of the charger, and are suitable for battery management systems and charging equipment.
3. **Power Switch and Protection Circuit**: In power switches and protection circuits, the HY15P04D-VB can provide reliable switching control to protect the circuit from overcurrent and overvoltage. Suitable for high-load circuits such as inverters and power modules.
4. **High-efficiency electronic devices**: In electronic devices that require high efficiency and compact design, such as high-performance computers and communication equipment, the HY15P04D-VB can provide high current control in a limited space to support efficient operation of the system.
These application examples demonstrate the superior performance of the HY15P04D-VB in high-current and high-efficiency demand scenarios, and are suitable for a variety of electronic devices and circuit designs that require high loads and high efficiency.
The high current handling capability and low on-resistance of the HY15P04D-VB enable it to excel in the following fields and modules:
1. **Power Management and Switching Power Supply**: In power management systems, especially in applications that need to handle high currents, the HY15P04D-VB can provide efficient switching control and optimize power conversion efficiency. It is suitable for high-power power converters and regulators, especially in data centers and industrial power modules.
2. **Electric Vehicle (EV) Charging System**: In electric vehicle charging systems, this MOSFET can handle high currents and high loads, supporting an efficient charging process. Its high current and low on-resistance characteristics can improve the efficiency and reliability of the charger, and are suitable for battery management systems and charging equipment.
3. **Power Switch and Protection Circuit**: In power switches and protection circuits, the HY15P04D-VB can provide reliable switching control to protect the circuit from overcurrent and overvoltage. Suitable for high-load circuits such as inverters and power modules.
4. **High-efficiency electronic devices**: In electronic devices that require high efficiency and compact design, such as high-performance computers and communication equipment, the HY15P04D-VB can provide high current control in a limited space to support efficient operation of the system.
These application examples demonstrate the superior performance of the HY15P04D-VB in high-current and high-efficiency demand scenarios, and are suitable for a variety of electronic devices and circuit designs that require high loads and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
