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HY1506D-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HY1506D-VB** is a high-performance N-channel MOSFET with a TO252 package type. It is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of up to 58A. This MOSFET uses Trench technology to provide low on-resistance and efficient switching performance. **HY1506D-VB**'s low on-resistance performs well at different gate-source voltages (VGS), making it suitable for a variety of power management and load switching applications.
**HY1506D-VB** is a high-performance N-channel MOSFET with a TO252 package type. It is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of up to 58A. This MOSFET uses Trench technology to provide low on-resistance and efficient switching performance. **HY1506D-VB**'s low on-resistance performs well at different gate-source voltages (VGS), making it suitable for a variety of power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**HY1506D-VB** MOSFET is very suitable for the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **Power management**: In high current DC-DC converters and power modules, **HY1506D-VB** can be used as an efficient switching element to provide stable power output, reduce power consumption and improve system efficiency.
2. **Motor drive**: In motor control systems that need to handle large currents, this MOSFET can stably drive the motor, ensure high efficiency and reliability, while reducing power consumption and heat generation.
3. **Load switch**: Suitable for various load switch applications, such as industrial equipment and household appliances, it can handle currents up to 58A, provide stable switching performance and high efficiency.
4. **Battery Management System**: In high-power battery management systems, **HY1506D-VB** can effectively control the battery charging and discharging process, ensuring battery safety and performance while handling larger current demands.
Through these applications, **HY1506D-VB** MOSFET can play a key role in high-current and high-efficiency circuits, improving overall system performance and reliability.
**HY1506D-VB** MOSFET is very suitable for the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **Power management**: In high current DC-DC converters and power modules, **HY1506D-VB** can be used as an efficient switching element to provide stable power output, reduce power consumption and improve system efficiency.
2. **Motor drive**: In motor control systems that need to handle large currents, this MOSFET can stably drive the motor, ensure high efficiency and reliability, while reducing power consumption and heat generation.
3. **Load switch**: Suitable for various load switch applications, such as industrial equipment and household appliances, it can handle currents up to 58A, provide stable switching performance and high efficiency.
4. **Battery Management System**: In high-power battery management systems, **HY1506D-VB** can effectively control the battery charging and discharging process, ensuring battery safety and performance while handling larger current demands.
Through these applications, **HY1506D-VB** MOSFET can play a key role in high-current and high-efficiency circuits, improving overall system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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