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HY1506B-VB Product details
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HY1506B-VB MOSFET Product Introduction
HY1506B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The MOSFET has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. HY1506B-VB uses advanced trench technology to provide a low on-resistance (RDS(ON)) of 12mΩ@VGS=4.5V and 11mΩ@VGS=10V, supporting a maximum drain current (ID) of 75A. Its excellent performance makes it suitable for a variety of applications requiring high current and high switching efficiency.
HY1506B-VB is a high-performance unipolar N-channel MOSFET in TO263 package. The MOSFET has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. HY1506B-VB uses advanced trench technology to provide a low on-resistance (RDS(ON)) of 12mΩ@VGS=4.5V and 11mΩ@VGS=10V, supporting a maximum drain current (ID) of 75A. Its excellent performance makes it suitable for a variety of applications requiring high current and high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package is a medium to large surface mount package with excellent heat dissipation performance, suitable for medium to high power applications.
2. **Configuration**: Unipolar N-channel
- The N-channel MOSFET configuration is suitable for load switching and current control, and can be turned on at a positive gate voltage, providing efficient switching performance.
3. **VDS (Drain-Source Voltage)**: 60V
- This MOSFET supports a maximum drain-source voltage of 60V, suitable for applications handling medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 1.7V makes it suitable for low voltage drive applications and provides fast switching response.
6. **RDS(ON)（On-resistance）**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: 75A
- The maximum continuous drain current is 75A, making this MOSFET suitable for high current load scenarios.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring high efficiency and fast switching speed of MOSFET.
1. **Package**: TO263
- The TO263 package is a medium to large surface mount package with excellent heat dissipation performance, suitable for medium to high power applications.
2. **Configuration**: Unipolar N-channel
- The N-channel MOSFET configuration is suitable for load switching and current control, and can be turned on at a positive gate voltage, providing efficient switching performance.
3. **VDS (Drain-Source Voltage)**: 60V
- This MOSFET supports a maximum drain-source voltage of 60V, suitable for applications handling medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 1.7V makes it suitable for low voltage drive applications and provides fast switching response.
6. **RDS(ON)（On-resistance）**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: 75A
- The maximum continuous drain current is 75A, making this MOSFET suitable for high current load scenarios.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring high efficiency and fast switching speed of MOSFET.
Domain and module applications：
Application Examples
HY1506B-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY1506B-VB can be used as an efficient switching element to optimize power conversion and improve system efficiency, suitable for various power management applications.
2. **Electric Vehicle (EV) System**:
- In electric vehicle systems, HY1506B-VB can be used as a switching element for battery management and power control modules, supporting high current and high power requirements, ensuring high efficiency and stability of the system.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as motor drives and control systems, HY1506B-VB can be used for switching operations of high current loads, providing stable current control and high efficiency, suitable for industrial robots and automated production lines.
4. **LED lighting driver circuit**:
- This MOSFET can be used in LED lighting driver circuits, providing efficient switching functions and low power consumption, ensuring stable brightness and long life of LED lamps, suitable for various commercial and industrial lighting applications.
5. **High-power switching power supply**:
- In high-power switching power supplies, HY1506B-VB can be used as a switching element to optimize power conversion efficiency, reduce power consumption and heat generation, and is suitable for computer power modules and communication equipment.
These application examples demonstrate the versatility of HY1506B-VB MOSFET in high current and high efficiency demand scenarios, making it an ideal choice in multiple fields.
HY1506B-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY1506B-VB can be used as an efficient switching element to optimize power conversion and improve system efficiency, suitable for various power management applications.
2. **Electric Vehicle (EV) System**:
- In electric vehicle systems, HY1506B-VB can be used as a switching element for battery management and power control modules, supporting high current and high power requirements, ensuring high efficiency and stability of the system.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as motor drives and control systems, HY1506B-VB can be used for switching operations of high current loads, providing stable current control and high efficiency, suitable for industrial robots and automated production lines.
4. **LED lighting driver circuit**:
- This MOSFET can be used in LED lighting driver circuits, providing efficient switching functions and low power consumption, ensuring stable brightness and long life of LED lamps, suitable for various commercial and industrial lighting applications.
5. **High-power switching power supply**:
- In high-power switching power supplies, HY1506B-VB can be used as a switching element to optimize power conversion efficiency, reduce power consumption and heat generation, and is suitable for computer power modules and communication equipment.
These application examples demonstrate the versatility of HY1506B-VB MOSFET in high current and high efficiency demand scenarios, making it an ideal choice in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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