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HY1504U-VB Product details
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Product Introduction
HY1504U-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for low voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V, supporting a continuous drain current (ID) of up to 55A. It uses advanced Trench technology to achieve low on-resistance (RDS(ON)) to improve the system's energy efficiency and reduce power loss.
HY1504U-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for low voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V, supporting a continuous drain current (ID) of up to 55A. It uses advanced Trench technology to achieve low on-resistance (RDS(ON)) to improve the system's energy efficiency and reduce power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
HY1504U-VB MOSFET performs well in a variety of applications that require low voltage and high current. In **power management systems**, it is suitable for **high-efficiency DC-DC converters**, providing efficient current conversion and management. In the **electric vehicle** field, this MOSFET can be used in **motor drive systems** to support stable control of large currents. In addition, in **industrial automation**, it can be used as a **power switch** and **load switch**, providing efficient current control and reliable operation performance. In **consumer electronics** products, such as **power supply modules** and **load drivers**, HY1504U-VB can also effectively improve the performance and energy efficiency of equipment. The low on-resistance and high current handling capability of this MOSFET make it an ideal choice for efficient power management applications.
HY1504U-VB MOSFET performs well in a variety of applications that require low voltage and high current. In **power management systems**, it is suitable for **high-efficiency DC-DC converters**, providing efficient current conversion and management. In the **electric vehicle** field, this MOSFET can be used in **motor drive systems** to support stable control of large currents. In addition, in **industrial automation**, it can be used as a **power switch** and **load switch**, providing efficient current control and reliable operation performance. In **consumer electronics** products, such as **power supply modules** and **load drivers**, HY1504U-VB can also effectively improve the performance and energy efficiency of equipment. The low on-resistance and high current handling capability of this MOSFET make it an ideal choice for efficient power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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