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HY14P10D-VB Product details
Back to previous pageProduct introduction：
1. HY14P10D-VB Product Introduction
HY14P10D-VB is a high-performance single P-channel MOSFET packaged in TO252. The device has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. Its threshold voltage (Vth) is -2V, ensuring stable operation at lower gate-source voltages. HY14P10D-VB is particularly suitable for applications that require high-voltage withstand and high-efficiency switches, providing excellent performance and reliability.
HY14P10D-VB is a high-performance single P-channel MOSFET packaged in TO252. The device has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. Its threshold voltage (Vth) is -2V, ensuring stable operation at lower gate-source voltages. HY14P10D-VB is particularly suitable for applications that require high-voltage withstand and high-efficiency switches, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
II. HY14P10D-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON)）**:
- 37mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -40A
8. **Technology type**: Trench technology
1. **Package type**: TO252
2. **Polarity configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON)）**:
- 37mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -40A
8. **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples
HY14P10D-VB MOSFET is widely used in the following fields and modules due to its high withstand voltage and low on-resistance:
1. **Power management**: In power management systems, such as DC-DC converters and AC-DC power supplies, this MOSFET can be used as an efficient switching element to optimize the efficiency of the power system and reduce energy loss. Its high withstand voltage capability ensures reliability in high voltage environments.
2. **Inverter**: In inverter applications, such as solar inverters or UPS (uninterruptible power supply), HY14P10D-VB can provide stable switching control, handle high current loads, and improve the overall efficiency and stability of the inverter.
3. **Power switch**: Suitable for high power switching applications, such as power amplifiers, electric drive systems, etc. Its low on-resistance enables it to efficiently handle large currents, ensuring stable operation of the system.
4. **Automotive electronics**: In automotive electronic systems, such as battery management systems and on-board chargers, this MOSFET can provide reliable switching control, handle high-power loads, and enhance the performance and stability of automotive electronic equipment.
These applications demonstrate the wide applicability of the HY14P10D-VB, especially in applications that require high voltage and high current handling capabilities, where its performance advantages are fully utilized.
HY14P10D-VB MOSFET is widely used in the following fields and modules due to its high withstand voltage and low on-resistance:
1. **Power management**: In power management systems, such as DC-DC converters and AC-DC power supplies, this MOSFET can be used as an efficient switching element to optimize the efficiency of the power system and reduce energy loss. Its high withstand voltage capability ensures reliability in high voltage environments.
2. **Inverter**: In inverter applications, such as solar inverters or UPS (uninterruptible power supply), HY14P10D-VB can provide stable switching control, handle high current loads, and improve the overall efficiency and stability of the inverter.
3. **Power switch**: Suitable for high power switching applications, such as power amplifiers, electric drive systems, etc. Its low on-resistance enables it to efficiently handle large currents, ensuring stable operation of the system.
4. **Automotive electronics**: In automotive electronic systems, such as battery management systems and on-board chargers, this MOSFET can provide reliable switching control, handle high-power loads, and enhance the performance and stability of automotive electronic equipment.
These applications demonstrate the wide applicability of the HY14P10D-VB, especially in applications that require high voltage and high current handling capabilities, where its performance advantages are fully utilized.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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