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HY1403D-VB Product details
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HY1403D-VB MOSFET Product Introduction
HY1403D-VB is a high-performance unipolar N-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. HY1403D-VB uses advanced trench technology to provide low on-resistance (RDS(ON)) of 9mΩ@VGS=4.5V and 7mΩ@VGS=10V, supporting a maximum drain current (ID) of 70A. Its excellent performance makes it suitable for a variety of applications that require high current handling and high switching efficiency.
HY1403D-VB is a high-performance unipolar N-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. HY1403D-VB uses advanced trench technology to provide low on-resistance (RDS(ON)) of 9mΩ@VGS=4.5V and 7mΩ@VGS=10V, supporting a maximum drain current (ID) of 70A. Its excellent performance makes it suitable for a variety of applications that require high current handling and high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- The TO252 package is a medium-sized surface mount package with good heat dissipation and a robust structure, suitable for medium to high power applications.
2. **Configuration**: Unipolar N-Channel
- The N-Channel MOSFET configuration provides efficient switching performance, suitable for load switching and current control applications, and is able to turn on at a positive gate voltage.
3. **VDS (Drain-Source Voltage)**: 30V
- This MOSFET supports a maximum drain-source voltage of 30V, suitable for applications handling medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 1.7V makes it suitable for low voltage drive applications and provides agile switching performance.
6. **RDS(ON)（On-resistance）**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, suitable for applications requiring high current and high efficiency.
7. **ID（Continuous Drain Current）**: 70A
- The maximum continuous drain current is 70A, making this MOSFET suitable for scenarios with high current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has high efficiency and fast switching speed.
1. **Package**: TO252
- The TO252 package is a medium-sized surface mount package with good heat dissipation and a robust structure, suitable for medium to high power applications.
2. **Configuration**: Unipolar N-Channel
- The N-Channel MOSFET configuration provides efficient switching performance, suitable for load switching and current control applications, and is able to turn on at a positive gate voltage.
3. **VDS (Drain-Source Voltage)**: 30V
- This MOSFET supports a maximum drain-source voltage of 30V, suitable for applications handling medium voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 1.7V makes it suitable for low voltage drive applications and provides agile switching performance.
6. **RDS(ON)（On-resistance）**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, suitable for applications requiring high current and high efficiency.
7. **ID（Continuous Drain Current）**: 70A
- The maximum continuous drain current is 70A, making this MOSFET suitable for scenarios with high current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has high efficiency and fast switching speed.
Domain and module applications：
Application Examples
HY1403D-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY1403D-VB can be used as an efficient switching element to optimize power conversion and improve system efficiency.
2. **Electric Vehicle (EV) System**:
- In electric vehicle systems, HY1403D-VB can be used as a switching element for battery management and power control modules, supporting high current and high power requirements, ensuring high efficiency and stability of the system.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as motor drives and control systems, HY1403D-VB can be used for switching operations of high current loads, providing stable current control and high efficiency.
4. **LED lighting drive circuit**:
- This MOSFET can be used in LED lighting drive circuits, providing efficient switching functions and low power consumption, ensuring stable brightness and long life of LED lamps.
5. **High-power switching power supply**:
- In high-power switching power supplies, HY1403D-VB can be used as a switching element to optimize power conversion efficiency, reduce power consumption and heat, and is suitable for use in various power modules and applications.
These application examples demonstrate the versatility of HY1403D-VB MOSFET in high current and high efficiency demand scenarios, making it an excellent choice in multiple fields.
HY1403D-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY1403D-VB can be used as an efficient switching element to optimize power conversion and improve system efficiency.
2. **Electric Vehicle (EV) System**:
- In electric vehicle systems, HY1403D-VB can be used as a switching element for battery management and power control modules, supporting high current and high power requirements, ensuring high efficiency and stability of the system.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as motor drives and control systems, HY1403D-VB can be used for switching operations of high current loads, providing stable current control and high efficiency.
4. **LED lighting drive circuit**:
- This MOSFET can be used in LED lighting drive circuits, providing efficient switching functions and low power consumption, ensuring stable brightness and long life of LED lamps.
5. **High-power switching power supply**:
- In high-power switching power supplies, HY1403D-VB can be used as a switching element to optimize power conversion efficiency, reduce power consumption and heat, and is suitable for use in various power modules and applications.
These application examples demonstrate the versatility of HY1403D-VB MOSFET in high current and high efficiency demand scenarios, making it an excellent choice in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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