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HY1320D-VB Product details

Product introduction:

1. HY1320D-VB Product Introduction

HY1320D-VB is a high-performance single-channel N-type MOSFET packaged in TO252. The MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Utilizing Trench technology, the HY1320D-VB provides an on-resistance (RDS(ON)) of 55mΩ, performs well at a VGS of 10V, and can handle a continuous drain current (ID) of up to 30A. Its high voltage tolerance and low on-resistance give it superior performance in applications that require high voltage and high current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 30A 55mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
II. HY1320D-VB Detailed Parameters

- **Package Type**: TO252
- **Channel Configuration**: Single Channel N-Type
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 55mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 30A
- **Maximum Pulsed Drain Current (IDM)**: 120A
- **Junction Temperature and Storage Temperature (TJ, TSTG)**: -55°C to +175°C
- **Input Capacitance (Ciss)**: 3200 pF (Typical)
- **Reverse recovery time (trr)**: 250 ns (typical)

Domain and module applications:

3. Application fields and module examples

The high voltage tolerance and low on-resistance of HY1320D-VB make it excellent in the following fields and modules:

1. **High voltage power management**: In high voltage power converters and regulators, this MOSFET can handle voltages up to 200V and provide reliable switching control, which is suitable for high voltage conversion modules in industrial power supplies and power systems.

2. **Electric vehicle (EV) charging system**: In the high voltage charging system of electric vehicles, HY1320D-VB can handle high voltage and high current, support safe and stable charging process, and optimize the performance of the charger.

3. **Switching power supply and DC-DC converter**: In switching power supply and DC-DC converter, this MOSFET can be used for high voltage and high current switching operation to improve system efficiency, which is suitable for data center power supply and battery management system.

4. **Motor drive applications**: In motor drive modules, such as stepper motor drivers, the HY1320D-VB is able to handle high current and high voltage switching control, providing stable motor drive performance for industrial automation and power tools.

These application examples demonstrate the excellent performance of the HY1320D-VB under high voltage and high current control requirements, making it an ideal choice for high voltage electronic equipment and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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