中文
English
HY1310D-VB Product details
Back to previous pageProduct introduction：
1. HY1310D-VB Product Introduction
HY1310D-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to provide low on-resistance and high current handling capability. Its threshold voltage (Vth) is 1.8V, which enables the device to operate stably at a lower gate-source voltage, suitable for a variety of high-efficiency and high-power density applications.
HY1310D-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology to provide low on-resistance and high current handling capability. Its threshold voltage (Vth) is 1.8V, which enables the device to operate stably at a lower gate-source voltage, suitable for a variety of high-efficiency and high-power density applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. HY1310D-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology
1. **Package type**: TO252
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples
HY1310D-VB MOSFET is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Power management**: In power management systems such as DC-DC converters and AC-DC power supplies, HY1310D-VB can effectively improve power conversion efficiency, reduce power loss, and optimize power system performance.
2. **Motor drive**: In applications such as industrial motor drive and electric vehicle motor control, the high current capability and low on-resistance of this MOSFET ensure efficient and stable operation of the motor, making it an ideal choice for high-power motor drive.
3. **Power switch**: Suitable for various power switching applications such as switching power supplies and power amplifiers. Its low on-resistance enables it to operate stably under high power loads and provide efficient switching control.
4. **Automotive electronics**: In automotive electronic systems, such as battery management systems, electric steering systems, and on-board chargers, the high withstand voltage and low on-resistance of this MOSFET provide a reliable power switch solution, enhancing the performance and stability of automotive electronic systems.
These applications demonstrate the wide applicability of HY1310D-VB, especially in applications with high power and high efficiency requirements, where its performance advantages are fully utilized.
HY1310D-VB MOSFET is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Power management**: In power management systems such as DC-DC converters and AC-DC power supplies, HY1310D-VB can effectively improve power conversion efficiency, reduce power loss, and optimize power system performance.
2. **Motor drive**: In applications such as industrial motor drive and electric vehicle motor control, the high current capability and low on-resistance of this MOSFET ensure efficient and stable operation of the motor, making it an ideal choice for high-power motor drive.
3. **Power switch**: Suitable for various power switching applications such as switching power supplies and power amplifiers. Its low on-resistance enables it to operate stably under high power loads and provide efficient switching control.
4. **Automotive electronics**: In automotive electronic systems, such as battery management systems, electric steering systems, and on-board chargers, the high withstand voltage and low on-resistance of this MOSFET provide a reliable power switch solution, enhancing the performance and stability of automotive electronic systems.
These applications demonstrate the wide applicability of HY1310D-VB, especially in applications with high power and high efficiency requirements, where its performance advantages are fully utilized.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
