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HY12P10D-VB Product details
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HY12P10D-VB MOSFET Product Introduction
HY12P10D-VB is a high-performance unipolar P-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of -100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of -2V. HY12P10D-VB uses advanced trench technology to provide a low on-resistance (RDS(ON)) of 120mΩ@VGS=4.5V and 100mΩ@VGS=10V, supporting a maximum drain current (ID) of -16A. Its efficient switching performance and high current handling capability make it suitable for a variety of applications requiring high power and high stability.
HY12P10D-VB is a high-performance unipolar P-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of -100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of -2V. HY12P10D-VB uses advanced trench technology to provide a low on-resistance (RDS(ON)) of 120mΩ@VGS=4.5V and 100mΩ@VGS=10V, supporting a maximum drain current (ID) of -16A. Its efficient switching performance and high current handling capability make it suitable for a variety of applications requiring high power and high stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
1. **Package**: TO252
- The TO252 package is a medium-sized surface mount package with good heat dissipation and rugged construction, suitable for applications requiring higher power handling.
2. **Configuration**: Unipolar P-Channel
- The P-Channel MOSFET configuration is suitable for load switching and current control, and is able to turn on at negative gate voltages, suitable for high-side switch applications.
3. **VDS (Drain-Source Voltage)**: -100V
- This MOSFET supports a maximum drain-source voltage of -100V, suitable for applications handling medium to high voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: -2V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The -2V Vth makes it suitable for low voltage drive applications and provides good switching performance.
6. **RDS(ON)（On-Resistance）**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: -16A
- The maximum continuous drain current is -16A, making this MOSFET suitable for scenarios with medium current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has higher efficiency and faster switching speed.
1. **Package**: TO252
- The TO252 package is a medium-sized surface mount package with good heat dissipation and rugged construction, suitable for applications requiring higher power handling.
2. **Configuration**: Unipolar P-Channel
- The P-Channel MOSFET configuration is suitable for load switching and current control, and is able to turn on at negative gate voltages, suitable for high-side switch applications.
3. **VDS (Drain-Source Voltage)**: -100V
- This MOSFET supports a maximum drain-source voltage of -100V, suitable for applications handling medium to high voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: -2V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The -2V Vth makes it suitable for low voltage drive applications and provides good switching performance.
6. **RDS(ON)（On-Resistance）**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: -16A
- The maximum continuous drain current is -16A, making this MOSFET suitable for scenarios with medium current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has higher efficiency and faster switching speed.
Domain and module applications：
Application Examples
HY12P10D-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY12P10D-VB can be used as a high-side switch to provide efficient power switching functions and optimize power conversion and management.
2. **Automotive Electronic Systems**:
- This MOSFET is suitable for high-side switching and load control in automotive electronic systems, such as electric power steering systems (EPS) and battery management systems (BMS), effectively controlling current loads and improving system stability and performance.
3. **Motor Drive Applications**:
- In motor drive applications, such as stepper motor drives and power tools, HY12P10D-VB can be used as a high-side switch for motors, providing reliable current control and high-efficiency operation.
4. **LED lighting system**:
- This MOSFET can be used as a high-side switch in LED lighting systems to provide stable current control and ensure uniform and stable brightness of LED lamps.
5. **Electric Vehicle (EV) System**:
- In electric vehicle systems, the HY12P10D-VB can be used in battery management and power control modules to support high voltage and high current applications, ensuring high efficiency and safety of electric vehicle systems.
These application examples demonstrate the versatility of the HY12P10D-VB MOSFET in high power and high stability demand scenarios, making it a preferred device in multiple fields.
HY12P10D-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power distribution modules, HY12P10D-VB can be used as a high-side switch to provide efficient power switching functions and optimize power conversion and management.
2. **Automotive Electronic Systems**:
- This MOSFET is suitable for high-side switching and load control in automotive electronic systems, such as electric power steering systems (EPS) and battery management systems (BMS), effectively controlling current loads and improving system stability and performance.
3. **Motor Drive Applications**:
- In motor drive applications, such as stepper motor drives and power tools, HY12P10D-VB can be used as a high-side switch for motors, providing reliable current control and high-efficiency operation.
4. **LED lighting system**:
- This MOSFET can be used as a high-side switch in LED lighting systems to provide stable current control and ensure uniform and stable brightness of LED lamps.
5. **Electric Vehicle (EV) System**:
- In electric vehicle systems, the HY12P10D-VB can be used in battery management and power control modules to support high voltage and high current applications, ensuring high efficiency and safety of electric vehicle systems.
These application examples demonstrate the versatility of the HY12P10D-VB MOSFET in high power and high stability demand scenarios, making it a preferred device in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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