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HY1210U-VB Product details
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HY1210U-VB MOSFET Product Introduction
HY1210U-VB is a high-performance N-channel MOSFET packaged in TO251, designed for high voltage and high current applications. It uses Trench technology, has low on-resistance and high current carrying capacity, and is suitable for systems that require efficient power management. The design goal of HY1210U-VB is to provide excellent switching performance and reliability, and is suitable for switching and regulation functions in various high-power electronic devices.
HY1210U-VB is a high-performance N-channel MOSFET packaged in TO251, designed for high voltage and high current applications. It uses Trench technology, has low on-resistance and high current carrying capacity, and is suitable for systems that require efficient power management. The design goal of HY1210U-VB is to provide excellent switching performance and reliability, and is suitable for switching and regulation functions in various high-power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HY1210U-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Drain current (ID)**: 35A
- **Technology type**: Trench technology
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Drain current (ID)**: 35A
- **Technology type**: Trench technology
Domain and module applications：
HY1210U-VB MOSFET application areas and module examples
1. **Power management system**: HY1210U-VB is suitable for various power management systems, including switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps improve energy efficiency, reduce power loss, and ensure efficient and stable operation of the power system.
2. **Motor control**: In electric vehicles and industrial motor drive applications, this MOSFET can provide high current and high voltage support, suitable for motor start and stop, speed regulation and direction control, and improve system performance and reliability.
3. **Power amplifier**: In power amplifier design, HY1210U-VB can provide stable switching performance and low on-resistance, suitable for amplification and control of high-power signals, ensuring high-quality signal output.
4. **Battery management system**: In battery management systems, this MOSFET is used to protect batteries from overcharge and overdischarge, and its high voltage and high current handling capabilities help ensure battery safety and long life.
With its powerful performance and high reliability, HY1210U-VB can play a key role in a variety of applications requiring high power and high efficiency.
1. **Power management system**: HY1210U-VB is suitable for various power management systems, including switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps improve energy efficiency, reduce power loss, and ensure efficient and stable operation of the power system.
2. **Motor control**: In electric vehicles and industrial motor drive applications, this MOSFET can provide high current and high voltage support, suitable for motor start and stop, speed regulation and direction control, and improve system performance and reliability.
3. **Power amplifier**: In power amplifier design, HY1210U-VB can provide stable switching performance and low on-resistance, suitable for amplification and control of high-power signals, ensuring high-quality signal output.
4. **Battery management system**: In battery management systems, this MOSFET is used to protect batteries from overcharge and overdischarge, and its high voltage and high current handling capabilities help ensure battery safety and long life.
With its powerful performance and high reliability, HY1210U-VB can play a key role in a variety of applications requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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