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HY1210D-VB Product details
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Product Introduction
HY1210D-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for applications requiring higher current and voltage. Its drain-source voltage (VDS) is 100V, which can withstand higher operating voltages, while its on-resistance (RDS(ON)) is very low, at 35mΩ and 30mΩ respectively (at VGS of 4.5V and 10V). This makes the HY1210D-VB perform well in high-efficiency switching and power management applications, especially in situations requiring high current and low power consumption. This MOSFET uses Trench technology to provide excellent switching performance and energy efficiency.
HY1210D-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for applications requiring higher current and voltage. Its drain-source voltage (VDS) is 100V, which can withstand higher operating voltages, while its on-resistance (RDS(ON)) is very low, at 35mΩ and 30mΩ respectively (at VGS of 4.5V and 10V). This makes the HY1210D-VB perform well in high-efficiency switching and power management applications, especially in situations requiring high current and low power consumption. This MOSFET uses Trench technology to provide excellent switching performance and energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HY1210D-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Model**: HY1210D-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The excellent characteristics of the HY1210D-VB MOSFET make it outstanding in many fields and modules:
1. **Power Management**: In switch mode power supplies (SMPS), DC-DC converters and battery management systems, the low on-resistance and high current handling capability of the HY1210D-VB can effectively reduce power losses and improve the energy efficiency of the system. It is suitable for high-efficiency power supply design to ensure stable power supply and system reliability.
2. **Load Switch**: This MOSFET performs well in load switching applications, especially those handling higher currents, such as industrial automation equipment, home appliances and consumer electronics. Its low on-resistance helps reduce switching losses and improve the efficiency and reliability of load management.
3. **Motor Drive**: The HY1210D-VB is suitable for medium to high power motor drive applications, such as power tools, electric vehicles and robotic systems. Its high current handling capability and low power consumption characteristics enable it to efficiently drive motors, improving the overall performance and response speed of the system.
The excellent characteristics of the HY1210D-VB MOSFET make it outstanding in many fields and modules:
1. **Power Management**: In switch mode power supplies (SMPS), DC-DC converters and battery management systems, the low on-resistance and high current handling capability of the HY1210D-VB can effectively reduce power losses and improve the energy efficiency of the system. It is suitable for high-efficiency power supply design to ensure stable power supply and system reliability.
2. **Load Switch**: This MOSFET performs well in load switching applications, especially those handling higher currents, such as industrial automation equipment, home appliances and consumer electronics. Its low on-resistance helps reduce switching losses and improve the efficiency and reliability of load management.
3. **Motor Drive**: The HY1210D-VB is suitable for medium to high power motor drive applications, such as power tools, electric vehicles and robotic systems. Its high current handling capability and low power consumption characteristics enable it to efficiently drive motors, improving the overall performance and response speed of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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