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HY1206D-VB Product details

Product introduction:

Product Introduction

**HY1206D-VB** is a single N-channel MOSFET in TO252 package, designed for high-efficiency and high-current applications. This MOSFET uses Trench technology to provide low on-resistance and reliable electrical performance. HY1206D-VB supports a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 18A, making it ideal for power management and switching applications that require high power handling and high efficiency. Its low on-resistance gives it good power efficiency and reliability during switching operations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 73mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Parameter Description

1. **Package type:** TO252 package, suitable for surface mounting, with good heat dissipation performance, and can effectively manage power loss.
2. **Configuration:** Single-N-Channel, suitable for circuit designs that require unidirectional current flow.
3. **Drain-source voltage (VDS):** 60V, suitable for medium voltage applications.
4. **Gate-source voltage (VGS):** ±20V, providing a large gate voltage tolerance to support a variety of control signal requirements.
5. **Turn-on voltage (Vth):** 1.7V, the lower threshold voltage allows the MOSFET to be effectively turned on at a lower gate drive voltage.
6. **On-resistance (RDS(ON)):**
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
Low on-resistance reduces power loss and improves overall circuit efficiency.
7. **Continuous drain current (ID):** 18A, capable of handling moderate current loads.
8. **Technology:** Trench technology is used to provide lower on-resistance and higher switching efficiency.

Domain and module applications:

Applications and Modules

**HY1206D-VB** has a wide range of applications and is suitable for the following modules and applications:

1. **Power Management:** Due to its moderate voltage and current specifications, this MOSFET is very suitable for use in switching power supplies (SMPS) and DC-DC converters to help achieve efficient power management and conversion.
2. **Motor Drives:** In motor control systems, HY1206D-VB can provide reliable current switching for medium-power motor drive applications, helping to reduce power losses and improve system operating efficiency.
3. **Battery Management Systems:** The low on-resistance and moderate current capability of this MOSFET make it suitable for battery charge and discharge management, improving the performance and reliability of battery systems.
4. **Automotive Electronics:** Suitable for automotive power management and load switch modules, it can operate stably in automotive electrical systems and meet the needs of high current and high voltage.
5. **Industrial Automation:** In industrial control systems, HY1206D-VB can be used for efficient power switching and load control to support high power requirements in industrial applications.

The design features of HY1206D-VB enable it to perform well in multiple power and electronic applications, meeting diverse high-efficiency and high-power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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