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HY10P10U-VB Product details
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Product Introduction
HY10P10U-VB is a high-performance single P-channel power MOSFET in TO251 package, designed for applications requiring negative voltage and high current handling. With a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V, this MOSFET is capable of handling a continuous drain current (ID) of up to -12A. It uses advanced Trench technology to provide a relatively low on-resistance (RDS(ON)) to improve overall system efficiency and reduce energy loss.
HY10P10U-VB is a high-performance single P-channel power MOSFET in TO251 package, designed for applications requiring negative voltage and high current handling. With a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V, this MOSFET is capable of handling a continuous drain current (ID) of up to -12A. It uses advanced Trench technology to provide a relatively low on-resistance (RDS(ON)) to improve overall system efficiency and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | 215mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 234mΩ @ VGS=4.5V
- 215mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 234mΩ @ VGS=4.5V
- 215mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
Domain and module applications：
Applicable fields and module examples
HY10P10U-VB MOSFET is widely used in scenarios that require negative voltage and high current control. In **power management systems**, it can be used for the negative switch of **high-voltage DC-DC converters** to help achieve efficient voltage conversion and load regulation. In the **electric vehicle** field, this MOSFET can be used for the negative switch of the **battery management system (BMS)** to support the safe and efficient operation of the battery. In addition, in **industrial automation**, it is suitable for use as a **high-power load switch**, providing stable current control and reliable operating performance. It can also be applied to **power switches** in **consumer electronics** to effectively manage power distribution and energy saving of equipment. In these applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice.
HY10P10U-VB MOSFET is widely used in scenarios that require negative voltage and high current control. In **power management systems**, it can be used for the negative switch of **high-voltage DC-DC converters** to help achieve efficient voltage conversion and load regulation. In the **electric vehicle** field, this MOSFET can be used for the negative switch of the **battery management system (BMS)** to support the safe and efficient operation of the battery. In addition, in **industrial automation**, it is suitable for use as a **high-power load switch**, providing stable current control and reliable operating performance. It can also be applied to **power switches** in **consumer electronics** to effectively manage power distribution and energy saving of equipment. In these applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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