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HY10P10D-VB Product details
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1. HY10P10D-VB Product Introduction
HY10P10D-VB is a single-channel P-type MOSFET packaged in TO252. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -2V. HY10P10D-VB uses Trench technology to provide a relatively low on-resistance, with an RDS(ON) of 280mΩ at a VGS of 4.5V and 250mΩ at a VGS of 10V, and can handle a continuous drain current (ID) of up to -8.8A. This design makes it suitable for applications that require high efficiency and high voltage control.
HY10P10D-VB is a single-channel P-type MOSFET packaged in TO252. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -2V. HY10P10D-VB uses Trench technology to provide a relatively low on-resistance, with an RDS(ON) of 280mΩ at a VGS of 4.5V and 250mΩ at a VGS of 10V, and can handle a continuous drain current (ID) of up to -8.8A. This design makes it suitable for applications that require high efficiency and high voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. HY10P10D-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -8.8A
- **Maximum pulsed drain current (IDM)**: -35A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3200 pF (typical)
- **Reverse recovery time (trr)**: 150 ns (typical)
- **Package type**: TO252
- **Channel configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -8.8A
- **Maximum pulsed drain current (IDM)**: -35A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3200 pF (typical)
- **Reverse recovery time (trr)**: 150 ns (typical)
Domain and module applications：
III. Application fields and module examples
The characteristics of HY10P10D-VB make it very suitable for the following fields and modules:
1. **Power management system**: In power converters, this MOSFET can be used for load switching and reverse current protection. It can effectively control the current flow and improve the reliability of the system, especially suitable for high voltage power modules and battery management systems.
2. **Electric vehicle (EV) applications**: In the battery management system and charger of electric vehicles, HY10P10D-VB can handle high voltage and provide reliable switching control to ensure the safe charging and discharging process of the battery.
3. **Switching power supplies and DC-DC converters**: In these systems, HY10P10D-VB can be used to implement high voltage switch control and load management, improving the energy efficiency and stability of the system.
4. **Motor drive module**: In motor drive applications, such as stepper motors and DC motor controllers, the HY10P10D-VB can be used to control the direction and switching of the motor, providing stable high current and high voltage operation.
These application examples demonstrate the advantages of the HY10P10D-VB in high voltage and high efficiency control demand scenarios, and are key components in a variety of high power electronic devices.
The characteristics of HY10P10D-VB make it very suitable for the following fields and modules:
1. **Power management system**: In power converters, this MOSFET can be used for load switching and reverse current protection. It can effectively control the current flow and improve the reliability of the system, especially suitable for high voltage power modules and battery management systems.
2. **Electric vehicle (EV) applications**: In the battery management system and charger of electric vehicles, HY10P10D-VB can handle high voltage and provide reliable switching control to ensure the safe charging and discharging process of the battery.
3. **Switching power supplies and DC-DC converters**: In these systems, HY10P10D-VB can be used to implement high voltage switch control and load management, improving the energy efficiency and stability of the system.
4. **Motor drive module**: In motor drive applications, such as stepper motors and DC motor controllers, the HY10P10D-VB can be used to control the direction and switching of the motor, providing stable high current and high voltage operation.
These application examples demonstrate the advantages of the HY10P10D-VB in high voltage and high efficiency control demand scenarios, and are key components in a variety of high power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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