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HY0920TS-VB Product details
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1. HY0920TS-VB Product Introduction
HY0920TS-VB is a high-performance N+N-channel MOSFET packaged as TSSOP8. This device is configured as a common drain configuration (Common Drain), suitable for high-density applications. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. The threshold voltage (Vth) is between 0.5 and 1.5V, which enables it to work stably at low gate-source voltages, suitable for a variety of power management and switching applications.
HY0920TS-VB is a high-performance N+N-channel MOSFET packaged as TSSOP8. This device is configured as a common drain configuration (Common Drain), suitable for high-density applications. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, and uses advanced trench technology to achieve low on-resistance and high current handling capability. The threshold voltage (Vth) is between 0.5 and 1.5V, which enables it to work stably at low gate-source voltages, suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. HY0920TS-VB Detailed parameter description
1. **Package type**: TSSOP8
2. **Configuration**: Common source-N+N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±12V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON)）**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 7.6A
8. **Technology type**: Trench technology
1. **Package type**: TSSOP8
2. **Configuration**: Common source-N+N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±12V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON)）**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 7.6A
8. **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples
HY0920TS-VB MOSFET is widely used in the following fields and modules due to its compact package and high performance:
1. **Portable electronic devices**: In portable devices such as smartphones and tablets, HY0920TS-VB can be used in power switches and management modules to provide efficient power switches to ensure long-term operation and high performance of the equipment.
2. **Power management system**: In the power management system, this MOSFET can optimize power conversion efficiency and reduce power loss. It is suitable for DC-DC converters, battery management systems and other fields to improve the overall performance and stability of the power system.
3. **LED driver**: The low on-resistance and high current handling capability of HY0920TS-VB make it suitable for LED drive circuits, which can efficiently control the switching state of LEDs and provide stable brightness and high performance.
4. **Automotive Electronics**: In automotive electronic applications, such as on-board power management and automotive electric devices, this MOSFET is able to handle high power loads, provide stable and reliable power switching solutions, and enhance the reliability and efficiency of automotive electronic systems.
These applications demonstrate the versatility of the HY0920TS-VB, especially in applications that require high performance and compact design, where its performance advantages are fully utilized.
HY0920TS-VB MOSFET is widely used in the following fields and modules due to its compact package and high performance:
1. **Portable electronic devices**: In portable devices such as smartphones and tablets, HY0920TS-VB can be used in power switches and management modules to provide efficient power switches to ensure long-term operation and high performance of the equipment.
2. **Power management system**: In the power management system, this MOSFET can optimize power conversion efficiency and reduce power loss. It is suitable for DC-DC converters, battery management systems and other fields to improve the overall performance and stability of the power system.
3. **LED driver**: The low on-resistance and high current handling capability of HY0920TS-VB make it suitable for LED drive circuits, which can efficiently control the switching state of LEDs and provide stable brightness and high performance.
4. **Automotive Electronics**: In automotive electronic applications, such as on-board power management and automotive electric devices, this MOSFET is able to handle high power loads, provide stable and reliable power switching solutions, and enhance the reliability and efficiency of automotive electronic systems.
These applications demonstrate the versatility of the HY0920TS-VB, especially in applications that require high performance and compact design, where its performance advantages are fully utilized.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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