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HY060N08MF-VB Product details
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1. HY060N08MF-VB Product Introduction
HY060N08MF-VB is a high-performance single-channel N-type MOSFET packaged in TO220F. The MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Using Trench technology, HY060N08MF-VB provides low on-resistance, 3.5mΩ at VGS of 10V, making it extremely efficient when handling continuous drain currents (ID) of up to 215A. Its low on-resistance and high current handling capability make it suitable for use in electronic devices that require high performance and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HY060N08MF-VB Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single channel N type
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 215A
- **Maximum pulsed drain current (IDM)**: 300A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 5500 pF (typical)
- **Reverse recovery time (trr)**: 150 ns (typical)
Domain and module applications：
3. Application fields and module examples
The design of HY060N08MF-VB makes it very suitable for the following fields and modules:
1. **Power management system**: In high-efficiency power converters and DC-DC converters, this MOSFET can effectively reduce energy loss and improve system efficiency, and is suitable for power adapters and industrial power management systems.
2. **Electric vehicle (EV) charger**: In electric vehicle chargers, HY060N08MF-VB can handle high current, support efficient charging, reduce heat generation, and improve charger stability and reliability.
3. **Switching power supply module**: In switching power supply systems, such as UPS and inverters, this MOSFET can provide stable high current support to ensure high efficiency and stability of the equipment under high load.
4. **Motor Driver**: In high-power motor drive applications, such as industrial automation and power tools, the low on-resistance of HY060N08MF-VB helps reduce power loss and improve the efficiency and response speed of motor drive.
Through these application examples, HY060N08MF-VB demonstrates its superior performance in high-current and high-efficiency demand scenarios, and is an indispensable component in various high-power electronic devices.
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