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HY060N08B-VB Product details
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HY060N08B-VB MOSFET Product Introduction
HY060N08B-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high voltage applications. It uses Trench technology, has low on-resistance and high current carrying capacity, and is suitable for power management systems that require high efficiency and reliability. This MOSFET is ideal for switching power supplies, motor drives, and other high-power electronic applications.
HY060N08B-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high voltage applications. It uses Trench technology, has low on-resistance and high current carrying capacity, and is suitable for power management systems that require high efficiency and reliability. This MOSFET is ideal for switching power supplies, motor drives, and other high-power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HY060N08B-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
HY060N08B-VB MOSFET application areas and module examples
1. **Switching Power Supply (SMPS)**: In switching power supply applications, the low on-resistance and high current carrying capacity of the HY060N08B-VB make it an ideal switching element. This helps improve power conversion efficiency and reduce power loss in the system.
2. **Motor Drive**: In motor drive systems, such as in electric vehicles or industrial motor control, this MOSFET can provide high current and high-efficiency switching performance to support motor starting, speed regulation and control, ensuring smooth operation of the system.
3. **DC-DC Converter**: The HY060N08B-VB is suitable for DC-DC converters, which can effectively handle high currents and reduce energy loss during the conversion process, thereby improving the overall efficiency of the converter.
4. **Power Management Module**: In various power management modules, such as power factor correction circuit (PFC) and battery management system, this MOSFET can stably handle high current and high voltage, ensuring the stability and reliability of the system.
HY060N08B-VB is suitable for use in applications requiring high current and high voltage due to its excellent performance and high reliability.
1. **Switching Power Supply (SMPS)**: In switching power supply applications, the low on-resistance and high current carrying capacity of the HY060N08B-VB make it an ideal switching element. This helps improve power conversion efficiency and reduce power loss in the system.
2. **Motor Drive**: In motor drive systems, such as in electric vehicles or industrial motor control, this MOSFET can provide high current and high-efficiency switching performance to support motor starting, speed regulation and control, ensuring smooth operation of the system.
3. **DC-DC Converter**: The HY060N08B-VB is suitable for DC-DC converters, which can effectively handle high currents and reduce energy loss during the conversion process, thereby improving the overall efficiency of the converter.
4. **Power Management Module**: In various power management modules, such as power factor correction circuit (PFC) and battery management system, this MOSFET can stably handle high current and high voltage, ensuring the stability and reliability of the system.
HY060N08B-VB is suitable for use in applications requiring high current and high voltage due to its excellent performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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