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HY050N08B-VB Product details
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Product Introduction
**HY050N08B-VB** is a single N-channel MOSFET in a TO220F package. It combines advanced Trench technology to provide high-efficiency electrical performance, especially suitable for high-power and high-current applications. HY050N08B-VB has a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 215A, enabling it to operate stably under high voltage and high current environments. Its low on-resistance ensures low power loss and excellent efficiency, making it an ideal choice for applications requiring high reliability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package type:** TO263 package, suitable for surface mounting, with good heat dissipation and mechanical strength, suitable for larger power requirements.
2. **Configuration:** Single-N-Channel, suitable for circuit designs that require unidirectional current flow.
3. **Drain-source voltage (VDS):** 80V, able to work reliably in medium and high voltage environments.
4. **Gate-source voltage (VGS):** ±20V, with a large gate voltage tolerance to adapt to different control signal requirements.
5. **Turning point voltage (Vth):** 3.3V, the relatively high threshold voltage ensures reliable switching under higher gate drive voltages.
6. **On-resistance (RDS(ON)):**
- 3.5mΩ @ VGS=10V
Extremely low on-resistance helps reduce power loss and improve system efficiency.
7. **Continuous drain current (ID):** 215A, capable of handling large current loads, suitable for high-power applications.
8. **Technology:** Trench technology is used to provide lower on-resistance and higher switching efficiency.
Domain and module applications：
Application Fields and Modules
**HY050N08B-VB** has a wide range of applications in multiple fields and modules, including:
1. **High Power Switching:** Due to its high current handling capability and low on-resistance, this MOSFET is ideal for high power switching applications such as high power DC-DC Converters and Switch Mode Power Supplies (SMPS).
2. **Motor Drives:** In motor control systems, this MOSFET can provide efficient current switching for high current motor drives, helping to reduce power losses and improve system performance.
3. **Battery Management Systems:** In battery charge and discharge management applications, the low on-resistance and high current capability of HY050N08B-VB help improve the performance and reliability of battery systems.
4. **Automotive Electronics:** Suitable for automotive power management systems and load switches, capable of stable operation in high voltage and high current automotive environments.
5. **Industrial Automation:** In industrial control systems, this MOSFET is suitable for high-power load control and switching, supporting high-efficiency and high-reliability industrial applications.
The high-performance characteristics of HY050N08B-VB make it an important component in a variety of high-power applications, able to meet stringent electrical requirements and provide reliable operation.
Technical support：
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