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HY04P30-VB Product details
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HY04P30-VB MOSFET Product Introduction
HY04P30-VB is a single P-channel MOSFET in SOT23-3 package, designed for high-performance, low-power applications. It has a negative drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to -5.6A, making it suitable for a variety of small circuits and low-voltage applications. HY04P30-VB uses advanced Trench technology to provide low on-resistance (RDS(ON)) and excellent switching characteristics, suitable for power management, circuit protection and small power switches.
HY04P30-VB is a single P-channel MOSFET in SOT23-3 package, designed for high-performance, low-power applications. It has a negative drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to -5.6A, making it suitable for a variety of small circuits and low-voltage applications. HY04P30-VB uses advanced Trench technology to provide low on-resistance (RDS(ON)) and excellent switching characteristics, suitable for power management, circuit protection and small power switches.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
HY04P30-VB MOSFET Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Continuous drain current (ID)**: -5.6A
- **Technology**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Continuous drain current (ID)**: -5.6A
- **Technology**: Trench
Domain and module applications：
HY04P30-VB MOSFET application areas and module examples
1. **Power management**:
- In power management circuits, HY04P30-VB can be used as a load switch or power on/off control element. Its low RDS(ON) characteristics can effectively reduce conduction losses and improve power efficiency, especially in small portable devices.
2. **Circuit protection**:
- Due to its negative drain-source voltage and low on-resistance, this MOSFET can be used for overcurrent protection and reverse current protection in protection circuits. It can quickly cut off the current when the current exceeds the safe range to protect subsequent circuit components.
3. **Small power switch**:
- In small power switch applications, such as portable devices and battery-powered systems, the small package and high current capability of HY04P30-VB make it an ideal choice. Its fast switching characteristics enable efficient switching control.
4. **Load switch**:
- HY04P30-VB can be used as a load switch in various electronic devices, such as in the battery management system of mobile phones, tablets and other devices to control the switching state of different modules and optimize power consumption.
These application fields and modules require switching elements with low on-resistance, fast response and high reliability, and HY04P30-VB just meets these needs.
1. **Power management**:
- In power management circuits, HY04P30-VB can be used as a load switch or power on/off control element. Its low RDS(ON) characteristics can effectively reduce conduction losses and improve power efficiency, especially in small portable devices.
2. **Circuit protection**:
- Due to its negative drain-source voltage and low on-resistance, this MOSFET can be used for overcurrent protection and reverse current protection in protection circuits. It can quickly cut off the current when the current exceeds the safe range to protect subsequent circuit components.
3. **Small power switch**:
- In small power switch applications, such as portable devices and battery-powered systems, the small package and high current capability of HY04P30-VB make it an ideal choice. Its fast switching characteristics enable efficient switching control.
4. **Load switch**:
- HY04P30-VB can be used as a load switch in various electronic devices, such as in the battery management system of mobile phones, tablets and other devices to control the switching state of different modules and optimize power consumption.
These application fields and modules require switching elements with low on-resistance, fast response and high reliability, and HY04P30-VB just meets these needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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