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HY04P30L-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HY04P30L-VB** is a high-performance P-channel MOSFET with SOT23-3 package type, designed for negative voltage switching applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V and can operate stably over a wide range of gate-source voltages (VGS). The use of Trench technology gives it a lower on-resistance and can withstand a continuous drain current (ID) of up to -5.6A. This device is ideal for applications requiring higher performance, such as power management and load switching.
**HY04P30L-VB** is a high-performance P-channel MOSFET with SOT23-3 package type, designed for negative voltage switching applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V and can operate stably over a wide range of gate-source voltages (VGS). The use of Trench technology gives it a lower on-resistance and can withstand a continuous drain current (ID) of up to -5.6A. This device is ideal for applications requiring higher performance, such as power management and load switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
2. Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID)**: -5.6A
- **Technology**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID)**: -5.6A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**HY04P30L-VB** MOSFET is suitable for a variety of fields and modules due to its excellent electrical performance and small package design:
1. **Power switch**: In portable devices and small electronic products, **HY04P30L-VB** can be used as an efficient load switch to provide reliable power switching function, help save space and improve the overall efficiency of the system.
2. **Load switch module**: Applicable to various load switch modules, it can work stably under loads up to -5.6A while maintaining low on-resistance, reducing power consumption and heat generation.
3. **Battery management system**: In battery protection and management circuits, **HY04P30L-VB** can be used to control the battery charging and discharging process to ensure the safety and performance of the battery.
4. **Small motor drive**: Used as a load switch in a small motor drive circuit to ensure the stability and efficiency of the motor under various operating conditions.
Through these applications, **HY04P30L-VB** MOSFET can play a key role in many circuits with compact and high-efficiency requirements, improving the reliability and performance of equipment.
**HY04P30L-VB** MOSFET is suitable for a variety of fields and modules due to its excellent electrical performance and small package design:
1. **Power switch**: In portable devices and small electronic products, **HY04P30L-VB** can be used as an efficient load switch to provide reliable power switching function, help save space and improve the overall efficiency of the system.
2. **Load switch module**: Applicable to various load switch modules, it can work stably under loads up to -5.6A while maintaining low on-resistance, reducing power consumption and heat generation.
3. **Battery management system**: In battery protection and management circuits, **HY04P30L-VB** can be used to control the battery charging and discharging process to ensure the safety and performance of the battery.
4. **Small motor drive**: Used as a load switch in a small motor drive circuit to ensure the stability and efficiency of the motor under various operating conditions.
Through these applications, **HY04P30L-VB** MOSFET can play a key role in many circuits with compact and high-efficiency requirements, improving the reliability and performance of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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