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HY045N10MF-VB Product details
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HY045N10MF-VB MOSFET Product Introduction
HY045N10MF-VB is a high-performance unipolar N-channel MOSFET in TO220F package. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 3V. With its advanced trench technology, HY045N10MF-VB provides a low on-resistance (RDS(ON)) of 3.7mΩ@VGS=10V and supports a maximum drain current (ID) of 120A, suitable for applications requiring high performance and high current handling.
HY045N10MF-VB is a high-performance unipolar N-channel MOSFET in TO220F package. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 3V. With its advanced trench technology, HY045N10MF-VB provides a low on-resistance (RDS(ON)) of 3.7mΩ@VGS=10V and supports a maximum drain current (ID) of 120A, suitable for applications requiring high performance and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- The TO220F package is a common pin power package with good heat dissipation performance and a rugged structure, suitable for applications that require higher power and higher heat dissipation efficiency.
2. **Configuration**: Unipolar N-channel
- The N-channel configuration has high efficiency in switching applications, allowing current to flow from the drain to the source when the gate voltage is applied, suitable for a variety of high-current switching applications.
3. **VDS (Drain-Source Voltage)**: 100V
- This MOSFET supports a maximum drain-source voltage of 100V, enabling it to handle medium to high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±20V
- The VGS rating of ±20V defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 3V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 3V makes it suitable for low voltage drive applications and provides good switching performance.
6. **RDS(ON)（On-resistance）**:
- 3.7mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: 120A
- The maximum continuous drain current is 120A, making this MOSFET suitable for scenarios with high current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has higher efficiency and faster switching speeds.
1. **Package**: TO220F
- The TO220F package is a common pin power package with good heat dissipation performance and a rugged structure, suitable for applications that require higher power and higher heat dissipation efficiency.
2. **Configuration**: Unipolar N-channel
- The N-channel configuration has high efficiency in switching applications, allowing current to flow from the drain to the source when the gate voltage is applied, suitable for a variety of high-current switching applications.
3. **VDS (Drain-Source Voltage)**: 100V
- This MOSFET supports a maximum drain-source voltage of 100V, enabling it to handle medium to high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±20V
- The VGS rating of ±20V defines the maximum voltage that can be applied between the gate and source, ensuring the safety and stability of the device under various operating conditions.
5. **Vth（Threshold Voltage）**: 3V
- The threshold voltage is the minimum gate-source voltage required for the MOSFET to start conducting. The Vth of 3V makes it suitable for low voltage drive applications and provides good switching performance.
6. **RDS(ON)（On-resistance）**:
- 3.7mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat generation, improves efficiency, and is suitable for high current applications.
7. **ID（Continuous Drain Current）**: 120A
- The maximum continuous drain current is 120A, making this MOSFET suitable for scenarios with high current loads.
8. **Technology**: Trench Technology
- Trench technology optimizes on-resistance and switching performance, ensuring that the MOSFET has higher efficiency and faster switching speeds.
Domain and module applications：
Application Examples
HY045N10MF-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power inverters, HY045N10MF-VB can be used for high-efficiency power switches, optimizing the power conversion process and improving overall system efficiency.
2. **Industrial Drive Circuit**:
- This MOSFET can be used in industrial motor drive circuits, such as power tools and automation equipment, providing high current handling capabilities and reliable switching performance to meet high power requirements in industrial applications.
3. **Automotive Electronic Systems**:
- In automotive electronic systems, such as electric power steering systems (EPS) and battery management systems (BMS), this MOSFET can effectively control high current loads and improve the overall performance and stability of the system.
4. **Solar Inverter**:
- In solar inverters, HY045N10MF-VB can be used for power conversion and management, ensuring efficient energy transmission and stable system operation, suitable for use in the field of renewable energy.
5. **Communication Equipment Power Module**:
- This MOSFET is also suitable for power modules of communication equipment, providing efficient current switching, supporting stable operation and high performance requirements of the equipment.
These application examples demonstrate the versatility of HY045N10MF-VB MOSFET in high power and high current demand scenarios, making it an excellent choice in multiple fields.
HY045N10MF-VB MOSFET has a wide range of applications in multiple fields and modules. For example:
1. **Power Management System**:
- In power management systems, such as DC-DC converters and power inverters, HY045N10MF-VB can be used for high-efficiency power switches, optimizing the power conversion process and improving overall system efficiency.
2. **Industrial Drive Circuit**:
- This MOSFET can be used in industrial motor drive circuits, such as power tools and automation equipment, providing high current handling capabilities and reliable switching performance to meet high power requirements in industrial applications.
3. **Automotive Electronic Systems**:
- In automotive electronic systems, such as electric power steering systems (EPS) and battery management systems (BMS), this MOSFET can effectively control high current loads and improve the overall performance and stability of the system.
4. **Solar Inverter**:
- In solar inverters, HY045N10MF-VB can be used for power conversion and management, ensuring efficient energy transmission and stable system operation, suitable for use in the field of renewable energy.
5. **Communication Equipment Power Module**:
- This MOSFET is also suitable for power modules of communication equipment, providing efficient current switching, supporting stable operation and high performance requirements of the equipment.
These application examples demonstrate the versatility of HY045N10MF-VB MOSFET in high power and high current demand scenarios, making it an excellent choice in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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