HY045N08MF-VB Product details
Product introduction:
Product Introduction
HY045N08MF-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high current applications. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of 20V, supporting a continuous drain current (ID) of up to 215A. This MOSFET uses advanced Trench technology to achieve extremely low on-resistance (RDS(ON)) at low gate-source voltage, thereby improving efficiency and reducing energy loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3.3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 3.5mΩ @ VGS=10V
- **Drain current (ID)**: 215A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
HY045N08MF-VB MOSFET is widely used in power management systems that need to handle large currents and require high efficiency. In **power converters**, it can provide efficient current switching and is suitable for **high-power DC-DC converters** to improve the overall energy efficiency of the system. In the **electric vehicle** field, this MOSFET can be used in **motor controllers** and **battery management systems (BMS)** to ensure stable current supply and efficient power conversion. In **industrial automation**, it can be used in **high-power motor drives** and **high-power load switches** to provide reliable current control. These applications rely on the high current handling capability and low on-resistance of this MOSFET, making it a key power electronic component.
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