中文
English
HUFA76645S3ST_F085-VB Product details
Back to previous pageProduct introduction：
HUFA76645S3ST_F085-VB MOSFET Product Introduction
HUFA76645S3ST_F085-VB is a high-performance unipolar N-channel MOSFET in TO263 package. Designed for demanding applications, this MOSFET features a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 2.5V. With its advanced trench technology, the device provides an on-resistance (RDS(ON)) of 23mΩ at VGS=4.5V, and 10mΩ at VGS=10V, ensuring efficient power handling capability with a maximum drain current (ID) of 100A.
HUFA76645S3ST_F085-VB is a high-performance unipolar N-channel MOSFET in TO263 package. Designed for demanding applications, this MOSFET features a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 2.5V. With its advanced trench technology, the device provides an on-resistance (RDS(ON)) of 23mΩ at VGS=4.5V, and 10mΩ at VGS=10V, ensuring efficient power handling capability with a maximum drain current (ID) of 100A.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package is a surface mount power package known for its excellent heat dissipation and space-saving design, which is ideal for high current applications.
2. **Configuration**: Unipolar N-Channel
- The N-Channel configuration provides high efficiency in switching applications, allowing current to flow from the drain to the source when the gate voltage is applied.
3. **VDS (Drain-Source Voltage)**: 100V
- This parameter defines the maximum voltage that can be applied between the drain and source. The 100V rating allows the MOSFET to handle medium to high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating indicates the maximum voltage that can be applied between the gate and source, ensuring safe operation and preventing gate oxide breakdown.
5. **Vth（Threshold Voltage）**: 2.5V
- The threshold voltage is the minimum gate-source voltage required to start conduction. The Vth of 2.5V makes it suitable for low voltage drive circuits.
6. **RDS(ON)（On-Resistance）**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat, improving overall efficiency. The RDS(ON) value of this MOSFET is particularly low, ensuring efficient current conduction.
7. **ID（Continuous Drain Current）**: 100A
- The maximum continuous drain current is 100A, allowing this MOSFET to handle high current loads and is suitable for high power applications.
8. **Technology**: Trench Technology
- Trench technology improves device performance by reducing on-resistance and gate charge, resulting in faster switching speeds and higher efficiency.
1. **Package**: TO263
- The TO263 package is a surface mount power package known for its excellent heat dissipation and space-saving design, which is ideal for high current applications.
2. **Configuration**: Unipolar N-Channel
- The N-Channel configuration provides high efficiency in switching applications, allowing current to flow from the drain to the source when the gate voltage is applied.
3. **VDS (Drain-Source Voltage)**: 100V
- This parameter defines the maximum voltage that can be applied between the drain and source. The 100V rating allows the MOSFET to handle medium to high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±20V
- The ±20V VGS rating indicates the maximum voltage that can be applied between the gate and source, ensuring safe operation and preventing gate oxide breakdown.
5. **Vth（Threshold Voltage）**: 2.5V
- The threshold voltage is the minimum gate-source voltage required to start conduction. The Vth of 2.5V makes it suitable for low voltage drive circuits.
6. **RDS(ON)（On-Resistance）**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- Low on-resistance reduces power loss and heat, improving overall efficiency. The RDS(ON) value of this MOSFET is particularly low, ensuring efficient current conduction.
7. **ID（Continuous Drain Current）**: 100A
- The maximum continuous drain current is 100A, allowing this MOSFET to handle high current loads and is suitable for high power applications.
8. **Technology**: Trench Technology
- Trench technology improves device performance by reducing on-resistance and gate charge, resulting in faster switching speeds and higher efficiency.
Domain and module applications：
Application Examples
The HUFA76645S3ST_F085-VB MOSFET is suitable for a variety of applications in multiple fields and modules. For example:
1. **Automotive Power System**:
- This MOSFET can be used in automotive power management systems such as Electric Power Steering (EPS) and Battery Management System (BMS) due to its high current handling capability and low on-resistance.
2. **Industrial Motor Drive**:
- In industrial environments, this MOSFET is suitable for applications such as motor drives, power inverters and power tools, providing efficient power conversion and reliable performance.
3. **Switching Power Supply**:
- The low RDS(ON) and high current handling capability of this device make it suitable for switching power supply applications such as DC-DC converters, uninterruptible power supplies (UPS), where efficiency is critical.
4. **Solar Inverter**:
- In renewable energy applications such as solar inverters, this MOSFET can effectively manage the power conversion process to ensure reliable and efficient energy transmission.
5. **Telecom Power Module**:
- This MOSFET can be used in telecom power supplies to help manage high power loads, reduce energy losses, and ensure stable and efficient operation of the communication infrastructure.
These examples highlight the versatility of the HUFA76645S3ST_F085-VB MOSFET in managing high power and current demands, making it an excellent choice for a variety of applications.
The HUFA76645S3ST_F085-VB MOSFET is suitable for a variety of applications in multiple fields and modules. For example:
1. **Automotive Power System**:
- This MOSFET can be used in automotive power management systems such as Electric Power Steering (EPS) and Battery Management System (BMS) due to its high current handling capability and low on-resistance.
2. **Industrial Motor Drive**:
- In industrial environments, this MOSFET is suitable for applications such as motor drives, power inverters and power tools, providing efficient power conversion and reliable performance.
3. **Switching Power Supply**:
- The low RDS(ON) and high current handling capability of this device make it suitable for switching power supply applications such as DC-DC converters, uninterruptible power supplies (UPS), where efficiency is critical.
4. **Solar Inverter**:
- In renewable energy applications such as solar inverters, this MOSFET can effectively manage the power conversion process to ensure reliable and efficient energy transmission.
5. **Telecom Power Module**:
- This MOSFET can be used in telecom power supplies to help manage high power loads, reduce energy losses, and ensure stable and efficient operation of the communication infrastructure.
These examples highlight the versatility of the HUFA76645S3ST_F085-VB MOSFET in managing high power and current demands, making it an excellent choice for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
