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HUFA76639S3ST-VB Product details
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1. HUFA76639S3ST-VB Product Introduction
HUFA76639S3ST-VB is a single-channel N-type MOSFET with a TO263 package, a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for high-efficiency, high-current switching applications. This product utilizes Trench technology to give it a low on-resistance (RDS(ON)), which is only 20mΩ when VGS is 10V, and can provide up to 70A of continuous drain current (ID). Its threshold voltage (Vth) is 1.8V, ensuring efficient switching performance under low voltage conditions. The overall design makes HUFA76639S3ST-VB very suitable for use in electronic devices with high power and high efficiency requirements.
HUFA76639S3ST-VB is a single-channel N-type MOSFET with a TO263 package, a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for high-efficiency, high-current switching applications. This product utilizes Trench technology to give it a low on-resistance (RDS(ON)), which is only 20mΩ when VGS is 10V, and can provide up to 70A of continuous drain current (ID). Its threshold voltage (Vth) is 1.8V, ensuring efficient switching performance under low voltage conditions. The overall design makes HUFA76639S3ST-VB very suitable for use in electronic devices with high power and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HUFA76639S3ST-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Maximum pulsed drain current (IDM)**: Up to 280A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3100 pF (typical)
- **Reverse recovery time (trr)**: 100 ns (typical)
- **Package type**: TO263
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Maximum pulsed drain current (IDM)**: Up to 280A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 3100 pF (typical)
- **Reverse recovery time (trr)**: 100 ns (typical)
Domain and module applications：
III. Application fields and module examples
HUFA76639S3ST-VB is widely used in the following fields due to its high current handling capability and low on-resistance:
1. **Power management module**: In power converters, especially DC-DC converters, this MOSFET can effectively reduce energy loss and improve conversion efficiency, and is suitable for server power supplies and telecommunication equipment.
2. **Electric vehicle (EV) drive system**: Suitable for battery management systems (BMS) and motor controllers in electric vehicles, it can efficiently control current flow and improve vehicle endurance and performance.
3. **Industrial control equipment**: In industrial control systems that require high performance and high reliability, such as motor drives and inverters, HUFA76639S3ST-VB can provide stable high current support.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, it is used for efficient switching and energy management to ensure that key equipment can still obtain stable power supply during power outages.
Through the above application examples, HUFA76639S3ST-VB has demonstrated its advantages in high-performance demand scenarios and has become a core component in a variety of key systems.
HUFA76639S3ST-VB is widely used in the following fields due to its high current handling capability and low on-resistance:
1. **Power management module**: In power converters, especially DC-DC converters, this MOSFET can effectively reduce energy loss and improve conversion efficiency, and is suitable for server power supplies and telecommunication equipment.
2. **Electric vehicle (EV) drive system**: Suitable for battery management systems (BMS) and motor controllers in electric vehicles, it can efficiently control current flow and improve vehicle endurance and performance.
3. **Industrial control equipment**: In industrial control systems that require high performance and high reliability, such as motor drives and inverters, HUFA76639S3ST-VB can provide stable high current support.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, it is used for efficient switching and energy management to ensure that key equipment can still obtain stable power supply during power outages.
Through the above application examples, HUFA76639S3ST-VB has demonstrated its advantages in high-performance demand scenarios and has become a core component in a variety of key systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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