中文
English
HUFA76629D3S-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**HUFA76629D3S-VB** is a single N-channel MOSFET in a TO252 package. The design of this device focuses on providing efficient power conversion and low on-resistance, suitable for applications that need to handle large currents in a high voltage environment. Its main features include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 40A. This MOSFET uses advanced Trench technology, which gives it excellent performance in a variety of switching and amplification applications.
**HUFA76629D3S-VB** is a single N-channel MOSFET in a TO252 package. The design of this device focuses on providing efficient power conversion and low on-resistance, suitable for applications that need to handle large currents in a high voltage environment. Its main features include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 40A. This MOSFET uses advanced Trench technology, which gives it excellent performance in a variety of switching and amplification applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
1. **Package type (Package):** TO252 package, suitable for surface mount technology, easy to integrate into compact circuit board design.
2. **Configuration (Configuration):** Single N-channel (Single-N-Channel), suitable for circuit design that requires unidirectional conduction.
3. **Drain-source voltage (VDS):** 100V, able to work reliably under high voltage environment.
4. **Gate-source voltage (VGS):** ±20V, with a higher gate voltage tolerance, providing better electrical robustness.
5. **Turning voltage (Vth):** 1.8V, the low threshold voltage enables it to effectively conduct at low gate drive voltage.
6. **On-resistance (RDS(ON)):**
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
Low on-resistance reduces power loss and improves overall efficiency.
7. **Continuous drain current (ID):** 40A, capable of handling high current loads, suitable for high power applications.
8. **Technology:** Trench technology is used to provide lower resistance and higher efficiency.
1. **Package type (Package):** TO252 package, suitable for surface mount technology, easy to integrate into compact circuit board design.
2. **Configuration (Configuration):** Single N-channel (Single-N-Channel), suitable for circuit design that requires unidirectional conduction.
3. **Drain-source voltage (VDS):** 100V, able to work reliably under high voltage environment.
4. **Gate-source voltage (VGS):** ±20V, with a higher gate voltage tolerance, providing better electrical robustness.
5. **Turning voltage (Vth):** 1.8V, the low threshold voltage enables it to effectively conduct at low gate drive voltage.
6. **On-resistance (RDS(ON)):**
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
Low on-resistance reduces power loss and improves overall efficiency.
7. **Continuous drain current (ID):** 40A, capable of handling high current loads, suitable for high power applications.
8. **Technology:** Trench technology is used to provide lower resistance and higher efficiency.
Domain and module applications：
Application Fields and Modules
**HUFA76629D3S-VB** has a wide range of applications in multiple fields and modules:
1. **Power Management Modules:** Due to its high voltage and high current handling capabilities, this MOSFET is ideal for use in switching power supplies (SMPS) and DC-DC converters to improve energy efficiency and stability.
2. **Motor Drives:** Its low on-resistance and high current handling capabilities make it an ideal choice in motor controllers, especially in applications that require fast switching response and low losses.
3. **Automotive Electronics:** In automotive electrical systems, this MOSFET can be used in various power distribution and motor control modules to ensure efficient and reliable operation.
4. **Industrial Automation:** Suitable for high-efficiency switching in industrial control systems, capable of operating in harsh industrial environments.
5. **Audio Amplifiers:** In high-fidelity audio amplifiers, this MOSFET can be used as an output stage component to provide low distortion and high-efficiency audio output.
The versatility and excellent electrical performance of this MOSFET make it a key component in a variety of high-efficiency circuit designs.
**HUFA76629D3S-VB** has a wide range of applications in multiple fields and modules:
1. **Power Management Modules:** Due to its high voltage and high current handling capabilities, this MOSFET is ideal for use in switching power supplies (SMPS) and DC-DC converters to improve energy efficiency and stability.
2. **Motor Drives:** Its low on-resistance and high current handling capabilities make it an ideal choice in motor controllers, especially in applications that require fast switching response and low losses.
3. **Automotive Electronics:** In automotive electrical systems, this MOSFET can be used in various power distribution and motor control modules to ensure efficient and reliable operation.
4. **Industrial Automation:** Suitable for high-efficiency switching in industrial control systems, capable of operating in harsh industrial environments.
5. **Audio Amplifiers:** In high-fidelity audio amplifiers, this MOSFET can be used as an output stage component to provide low distortion and high-efficiency audio output.
The versatility and excellent electrical performance of this MOSFET make it a key component in a variety of high-efficiency circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
