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HUFA76629D3ST-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HUFA76629D3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-252. It uses advanced Trench technology, has low on-resistance and high current carrying capacity, and is designed for high-power applications. HUFA76629D3ST-VB provides excellent electrical performance and is suitable for power management and switching applications that require high efficiency and reliability. It is widely used in various industrial and consumer electronic devices.
**HUFA76629D3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-252. It uses advanced Trench technology, has low on-resistance and high current carrying capacity, and is designed for high-power applications. HUFA76629D3ST-VB provides excellent electrical performance and is suitable for power management and switching applications that require high efficiency and reliability. It is widely used in various industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
1. **Package type (Package)**: TO-252
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
7. **Drain current (ID)**: 40A
8. **Technology (Technology)**: Trench technology
1. **Package type (Package)**: TO-252
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
7. **Drain current (ID)**: 40A
8. **Technology (Technology)**: Trench technology
Domain and module applications：
III. Application fields and module examples
**HUFA76629D3ST-VB** MOSFET is suitable for the following fields and modules due to its low on-resistance and high current capability:
1. **High-efficiency switching power supply (SMPS)**: In the switching power supply module, this MOSFET can significantly reduce the conduction loss and improve the overall power efficiency. It is suitable for computer power supply, communication equipment power supply and industrial power supply.
2. **Electric vehicle (EV)**: Due to its high current handling capability, HUFA76629D3ST-VB is suitable for the motor drive system of electric vehicles, providing stable current control, which helps to improve the performance and endurance of electric vehicles.
3. **Battery management system (BMS)**: In the battery management system, this MOSFET can effectively manage the charging and discharging process of the battery, improve the efficiency and safety of the battery, and is suitable for application in power tools and energy storage systems.
4. **LED drive circuit**: HUFA76629D3ST-VB can be used in LED drive circuits to stably control the LED current, thereby optimizing the brightness and life of the light source. It is widely used in LED lighting systems and smart lamps.
Through these applications, HUFA76629D3ST-VB MOSFET demonstrates its advantages in efficient power conversion and management, especially in situations where high current handling and low conduction losses are required.
**HUFA76629D3ST-VB** MOSFET is suitable for the following fields and modules due to its low on-resistance and high current capability:
1. **High-efficiency switching power supply (SMPS)**: In the switching power supply module, this MOSFET can significantly reduce the conduction loss and improve the overall power efficiency. It is suitable for computer power supply, communication equipment power supply and industrial power supply.
2. **Electric vehicle (EV)**: Due to its high current handling capability, HUFA76629D3ST-VB is suitable for the motor drive system of electric vehicles, providing stable current control, which helps to improve the performance and endurance of electric vehicles.
3. **Battery management system (BMS)**: In the battery management system, this MOSFET can effectively manage the charging and discharging process of the battery, improve the efficiency and safety of the battery, and is suitable for application in power tools and energy storage systems.
4. **LED drive circuit**: HUFA76629D3ST-VB can be used in LED drive circuits to stably control the LED current, thereby optimizing the brightness and life of the light source. It is widely used in LED lighting systems and smart lamps.
Through these applications, HUFA76629D3ST-VB MOSFET demonstrates its advantages in efficient power conversion and management, especially in situations where high current handling and low conduction losses are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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