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HUFA76619D3ST-VB Product details
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HUFA76619D3ST-VB MOSFET Product Introduction
HUFA76619D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET uses advanced Trench technology and has excellent current handling capability and reliable conduction performance. It is particularly suitable for applications requiring medium voltage and current handling, such as switching power supplies, motor drives, and power conversion modules. Its low on-resistance and stable electrical characteristics make HUFA76619D3ST-VB excel in high-performance and high-reliability systems.
HUFA76619D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET uses advanced Trench technology and has excellent current handling capability and reliable conduction performance. It is particularly suitable for applications requiring medium voltage and current handling, such as switching power supplies, motor drives, and power conversion modules. Its low on-resistance and stable electrical characteristics make HUFA76619D3ST-VB excel in high-performance and high-reliability systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HUFA76619D3ST-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Drain current(ID)**: 25A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Drain current(ID)**: 25A
- **Technology**: Trench
Domain and module applications：
HUFA76619D3ST-VB MOSFET Applications and Modules
1. **Switching Power Supplies**: HUFA76619D3ST-VB MOSFET can effectively control the power flow in the switching power supply module. Its low on-resistance and high current handling capability improve the power conversion efficiency and reduce the power loss. It is very suitable for use in power supply systems that require stable and efficient operation.
2. **Motor Drives**: In motor control systems, this MOSFET is suitable for driving medium-power motors. Its good current carrying capacity and stable switching characteristics enable it to provide precise motor control, suitable for motor drive applications in various industrial and consumer electronics products.
3. **Power Converters**: HUFA76619D3ST-VB MOSFET is very suitable for power converters, especially in situations where high voltage and medium current need to be handled. Its low RDS(ON) characteristics and high withstand voltage capability ensure high efficiency and stability during the conversion process.
4. **Battery Management Systems**: In battery management systems, this MOSFET can provide efficient current management and battery protection. It is suitable for electric vehicles and energy storage devices, and effectively manages the battery charging and discharging process through its stable performance and good conduction characteristics.
These application areas demonstrate the high efficiency and stability of the HUFA76619D3ST-VB MOSFET, making it a reliable choice in high current and high voltage applications.
1. **Switching Power Supplies**: HUFA76619D3ST-VB MOSFET can effectively control the power flow in the switching power supply module. Its low on-resistance and high current handling capability improve the power conversion efficiency and reduce the power loss. It is very suitable for use in power supply systems that require stable and efficient operation.
2. **Motor Drives**: In motor control systems, this MOSFET is suitable for driving medium-power motors. Its good current carrying capacity and stable switching characteristics enable it to provide precise motor control, suitable for motor drive applications in various industrial and consumer electronics products.
3. **Power Converters**: HUFA76619D3ST-VB MOSFET is very suitable for power converters, especially in situations where high voltage and medium current need to be handled. Its low RDS(ON) characteristics and high withstand voltage capability ensure high efficiency and stability during the conversion process.
4. **Battery Management Systems**: In battery management systems, this MOSFET can provide efficient current management and battery protection. It is suitable for electric vehicles and energy storage devices, and effectively manages the battery charging and discharging process through its stable performance and good conduction characteristics.
These application areas demonstrate the high efficiency and stability of the HUFA76619D3ST-VB MOSFET, making it a reliable choice in high current and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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