Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
80V |
|
1.7V |
3.5A |
|
|
62mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
80V |
|
1.7V |
3.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
80V |
|
1.7V |
3.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. HUFA76504DK8T-VB Detailed parameter description
1. **Package type**: SOP8
- The SOP8 package is small and easy to install on a compact circuit board, providing good heat dissipation performance, suitable for applications with limited space.
2. **Channel configuration**: Dual N-channel
- The dual N-channel configuration allows two N-channel MOSFETs to be implemented in the same package, suitable for circuit designs that require dual MOSFETs, such as half-bridge and full-bridge circuits.
3. **Drain-source voltage (VDS)**: 80V
- The maximum drain-source voltage is 80V, suitable for medium voltage applications and can withstand certain voltage fluctuations.
4. **Gate voltage (VGS)**: ±20V
- Supports gate-source voltage of ±20V, providing flexibility for design and ensuring stability under different operating conditions.
5. **Threshold Voltage (Vth)**: 1.7V
- The low threshold voltage of 1.7V enables the device to turn on at a lower gate voltage, improving the device's sensitivity and switching efficiency.
6. **On-resistance (RDS(ON))**: 62mΩ @ VGS=10V
- Low on-resistance helps reduce power loss and improve system efficiency, especially for high current applications.
7. **Drain Current (ID)**: 3.5A
- Capable of handling up to 3.5A of continuous current, suitable for medium current applications.
8. **Technology Type**: Trench
- Trench technology improves conductivity, reduces switching losses, and optimizes overall efficiency.
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
- In DC-DC converters, the dual N-channel configuration of HUFA76504DK8T-VB is well suited for half-bridge or full-bridge topologies for efficient power conversion. Its low on-resistance and high current capability help improve conversion efficiency and system stability.
2. **Motor drive**
- This MOSFET can be used in motor drive circuits, especially those applications that require a dual MOSFET configuration, such as stepper motor drivers. Its high current handling capability and low on-resistance ensure stable operation of the motor under high load conditions.
3. **Power amplifier**
- In power amplifier circuits, the dual N-channel design of HUFA76504DK8T-VB allows for more flexible circuit design, especially in applications that require symmetrical switching, such as in H-bridge circuits. Its low power loss characteristics help improve the efficiency and reliability of the amplifier.
4. **Battery Management System**
- In the battery management system, this MOSFET can be used for battery switch control and current protection. The dual N-channel configuration can support more complex protection circuit design, and its high efficiency and high current handling capability help ensure battery safety and performance.
The dual N-channel configuration, low on-resistance and trench technology of HUFA76504DK8T-VB enable it to perform well in power conversion, motor drive, power amplifier and battery management system, and is an important device in high-performance electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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