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HUFA76445S3S-VB Product details
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HUFA76445S3S-VB MOSFET Product Introduction
HUFA76445S3S-VB is a high-performance unipolar N-channel MOSFET that uses advanced Trench technology and is suitable for high current and high power applications. This MOSFET is packaged in a TO263 package and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, providing stable switching characteristics. The on-resistance (RDS(ON)) is 4mΩ at VGS=10V, showing extremely low power loss. The maximum continuous drain current (ID) is 150A, enabling it to handle high current loads and is suitable for applications requiring high current carrying capacity.
HUFA76445S3S-VB is a high-performance unipolar N-channel MOSFET that uses advanced Trench technology and is suitable for high current and high power applications. This MOSFET is packaged in a TO263 package and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, providing stable switching characteristics. The on-resistance (RDS(ON)) is 4mΩ at VGS=10V, showing extremely low power loss. The maximum continuous drain current (ID) is 150A, enabling it to handle high current loads and is suitable for applications requiring high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- The TO263 package is a surface mount package that provides good heat dissipation and compact design, making it ideal for high power MOSFET applications. The package helps improve thermal management capabilities and ensures stable operation of the MOSFET under high power conditions.
- **Configuration**: Unipolar N-channel
- Unipolar N-channel MOSFETs have low on-resistance and high switching speeds, making them suitable for applications that handle high currents and high frequencies.
- **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium voltage power management and power control applications, and the highest voltage that can be tolerated between the drain and source.
- **VGS (gate-source voltage)**: ±20V
- The maximum voltage between the gate and the source is ±20V, providing a flexible gate drive voltage range, allowing the MOSFET to operate stably under different driving conditions.
- **Vth (Threshold Voltage)**: 3V
- The threshold voltage is 3V, which indicates the minimum gate-source voltage required for the MOSFET to turn on. The higher threshold voltage is suitable for applications that require a stable control voltage.
- **RDS(ON) (On-Resistance)**: 4mΩ @ VGS=10V
- The on-resistance is 4mΩ at a gate voltage of 10V. The extremely low on-resistance helps reduce power losses and improve overall efficiency and performance.
- **ID (Continuous Drain Current)**: 150A
- The maximum continuous drain current is 150A, which indicates the maximum current that the MOSFET can handle in the on state. This high current capability makes it suitable for high-power applications and can withstand high loads.
- **Technology**: Trench
- Trench technology is used to achieve low on-resistance and fast switching speeds, providing a high-efficiency and high-density solution for applications that require high efficiency and high reliability.
- **Package**: TO263
- The TO263 package is a surface mount package that provides good heat dissipation and compact design, making it ideal for high power MOSFET applications. The package helps improve thermal management capabilities and ensures stable operation of the MOSFET under high power conditions.
- **Configuration**: Unipolar N-channel
- Unipolar N-channel MOSFETs have low on-resistance and high switching speeds, making them suitable for applications that handle high currents and high frequencies.
- **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium voltage power management and power control applications, and the highest voltage that can be tolerated between the drain and source.
- **VGS (gate-source voltage)**: ±20V
- The maximum voltage between the gate and the source is ±20V, providing a flexible gate drive voltage range, allowing the MOSFET to operate stably under different driving conditions.
- **Vth (Threshold Voltage)**: 3V
- The threshold voltage is 3V, which indicates the minimum gate-source voltage required for the MOSFET to turn on. The higher threshold voltage is suitable for applications that require a stable control voltage.
- **RDS(ON) (On-Resistance)**: 4mΩ @ VGS=10V
- The on-resistance is 4mΩ at a gate voltage of 10V. The extremely low on-resistance helps reduce power losses and improve overall efficiency and performance.
- **ID (Continuous Drain Current)**: 150A
- The maximum continuous drain current is 150A, which indicates the maximum current that the MOSFET can handle in the on state. This high current capability makes it suitable for high-power applications and can withstand high loads.
- **Technology**: Trench
- Trench technology is used to achieve low on-resistance and fast switching speeds, providing a high-efficiency and high-density solution for applications that require high efficiency and high reliability.
Domain and module applications：
Application Examples
HUFA76445S3S-VB MOSFET is suitable for use in multiple fields and modules due to its high current handling capability and low on-resistance.
1. **High-efficiency power management**: In DC-DC converters and switching power supplies, the 60V drain-source voltage and 4mΩ low on-resistance of HUFA76445S3S-VB enable it to efficiently handle current, thereby improving power conversion efficiency and system stability. Suitable for high-power computer power supplies, server power supplies, and industrial power systems.
2. **Motor drive**: Suitable for motor control applications that need to handle high currents of 150A. This MOSFET is able to provide a stable current to ensure efficient and reliable operation of the motor during motor startup, operation, and control. Commonly used in electric vehicles, power tools, and industrial motor drive systems.
3. **Battery Management System**: In battery management and charging systems, HUFA76445S3S-VB can be used as a battery switch controller to optimize the battery charging and discharging process. Its low on-resistance reduces energy loss and improves the efficiency of the battery system, and is suitable for electric vehicle battery management systems, large UPS systems and other fields.
4. **High-power LED drive**: In high-power LED drive applications, this MOSFET can be used to provide stable current control. Low on-resistance helps reduce power loss and improve the brightness and life of the LED. It is suitable for high-brightness LED lighting, display screens, and professional lighting systems.
In short, HUFA76445S3S-VB is a high-performance, high-current handling MOSFET suitable for various medium voltage and high current applications, providing excellent power management and switching performance.
HUFA76445S3S-VB MOSFET is suitable for use in multiple fields and modules due to its high current handling capability and low on-resistance.
1. **High-efficiency power management**: In DC-DC converters and switching power supplies, the 60V drain-source voltage and 4mΩ low on-resistance of HUFA76445S3S-VB enable it to efficiently handle current, thereby improving power conversion efficiency and system stability. Suitable for high-power computer power supplies, server power supplies, and industrial power systems.
2. **Motor drive**: Suitable for motor control applications that need to handle high currents of 150A. This MOSFET is able to provide a stable current to ensure efficient and reliable operation of the motor during motor startup, operation, and control. Commonly used in electric vehicles, power tools, and industrial motor drive systems.
3. **Battery Management System**: In battery management and charging systems, HUFA76445S3S-VB can be used as a battery switch controller to optimize the battery charging and discharging process. Its low on-resistance reduces energy loss and improves the efficiency of the battery system, and is suitable for electric vehicle battery management systems, large UPS systems and other fields.
4. **High-power LED drive**: In high-power LED drive applications, this MOSFET can be used to provide stable current control. Low on-resistance helps reduce power loss and improve the brightness and life of the LED. It is suitable for high-brightness LED lighting, display screens, and professional lighting systems.
In short, HUFA76445S3S-VB is a high-performance, high-current handling MOSFET suitable for various medium voltage and high current applications, providing excellent power management and switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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