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HUFA76445S3ST-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HUFA76445S3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-263. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current handling capability, making it excellent in high-power applications. HUFA76445S3ST-VB is designed for electronic circuits that require high performance and high stability, and is suitable for various high-power switches and power management systems.
**HUFA76445S3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-263. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current handling capability, making it excellent in high-power applications. HUFA76445S3ST-VB is designed for electronic circuits that require high performance and high stability, and is suitable for various high-power switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
1. **Package type (Package)**: TO-263
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology (Technology)**: Trench technology
1. **Package type (Package)**: TO-263
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology (Technology)**: Trench technology
Domain and module applications：
3. Application fields and module examples
**HUFA76445S3ST-VB** MOSFET's high current carrying capacity and low on-resistance make it very suitable for the following fields and modules:
1. **High-efficiency switching power supply (SMPS)**: This MOSFET can significantly reduce conduction losses in high-efficiency switching power supplies and improve the energy efficiency of the system. It is suitable for computer power supplies, industrial power supplies, and communication equipment power supplies.
2. **Electric vehicle (EV) drive system**: Due to its high current handling capability and low on-resistance, HUFA76445S3ST-VB is suitable for electric vehicle motor drive systems, providing stable current control and enhancing the performance and endurance of electric vehicles.
3. **Battery management system (BMS)**: In the battery management system, this MOSFET can effectively control the battery's charging and discharging process, improve the battery's efficiency and safety, and is widely used in power tools and energy storage systems.
4. **High-power LED drive circuit**: HUFA76445S3ST-VB is suitable for use in LED drive circuits. It can stably control the current of LED light sources, optimize the brightness and life of light sources, and is widely used in LED lighting systems and smart lamps.
In summary, HUFA76445S3ST-VB MOSFET has demonstrated outstanding performance in high-efficiency power conversion and management applications with its excellent electrical performance and high current handling capabilities.
**HUFA76445S3ST-VB** MOSFET's high current carrying capacity and low on-resistance make it very suitable for the following fields and modules:
1. **High-efficiency switching power supply (SMPS)**: This MOSFET can significantly reduce conduction losses in high-efficiency switching power supplies and improve the energy efficiency of the system. It is suitable for computer power supplies, industrial power supplies, and communication equipment power supplies.
2. **Electric vehicle (EV) drive system**: Due to its high current handling capability and low on-resistance, HUFA76445S3ST-VB is suitable for electric vehicle motor drive systems, providing stable current control and enhancing the performance and endurance of electric vehicles.
3. **Battery management system (BMS)**: In the battery management system, this MOSFET can effectively control the battery's charging and discharging process, improve the battery's efficiency and safety, and is widely used in power tools and energy storage systems.
4. **High-power LED drive circuit**: HUFA76445S3ST-VB is suitable for use in LED drive circuits. It can stably control the current of LED light sources, optimize the brightness and life of light sources, and is widely used in LED lighting systems and smart lamps.
In summary, HUFA76445S3ST-VB MOSFET has demonstrated outstanding performance in high-efficiency power conversion and management applications with its excellent electrical performance and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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