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HUFA76437S3S-VB Product details
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1. HUFA76437S3S-VB Product Introduction
HUFA76437S3S-VB is a high-performance single N-channel MOSFET in a TO-263 package. Designed for high current and medium voltage applications, the device features a 60V drain-source voltage tolerance and ultra-low on-resistance (12mΩ@VGS=4.5V, 11mΩ@VGS=10V). Its low threshold voltage (1.7V) allows for smooth switching at lower gate voltages, combined with advanced trench technology, enabling it to excel in power management, motor control, and other applications requiring high efficiency. The design of the HUFA76437S3S-VB not only improves switching speeds, but also reduces power losses, ensuring high reliability and efficiency.
HUFA76437S3S-VB is a high-performance single N-channel MOSFET in a TO-263 package. Designed for high current and medium voltage applications, the device features a 60V drain-source voltage tolerance and ultra-low on-resistance (12mΩ@VGS=4.5V, 11mΩ@VGS=10V). Its low threshold voltage (1.7V) allows for smooth switching at lower gate voltages, combined with advanced trench technology, enabling it to excel in power management, motor control, and other applications requiring high efficiency. The design of the HUFA76437S3S-VB not only improves switching speeds, but also reduces power losses, ensuring high reliability and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. HUFA76437S3S-VB Detailed parameter description
1. **Package type**: TO-263
- The TO-263 package has good heat dissipation performance and is suitable for high-power applications. At the same time, the package is small and convenient for use on compact circuit boards.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET suitable for a variety of switching and amplification applications, with efficient conduction and switching speed.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium-voltage circuit design and can withstand a certain degree of voltage fluctuation.
4. **Gate voltage (VGS)**: ±20V
- Supporting a gate-source voltage of ±20V provides design flexibility and ensures the stability of the MOSFET under different operating conditions.
5. **Threshold Voltage (Vth)**: 1.7V
- The low threshold voltage of 1.7V allows the device to be turned on smoothly at a lower gate voltage, improving the device's response speed and sensitivity.
6. **On-resistance (RDS(ON))**:
- **12mΩ @ VGS=4.5V**
- **11mΩ @ VGS=10V**
- Low on-resistance helps reduce power loss and improve the overall efficiency of the circuit, especially suitable for high current applications.
7. **Drain Current (ID)**: 75A
- Capable of handling up to 75A of continuous current, it is very suitable for high current power and load applications.
8. **Technology Type**: Trench
- Trench technology improves conductivity, reduces switching losses, and optimizes overall performance and efficiency.
1. **Package type**: TO-263
- The TO-263 package has good heat dissipation performance and is suitable for high-power applications. At the same time, the package is small and convenient for use on compact circuit boards.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET suitable for a variety of switching and amplification applications, with efficient conduction and switching speed.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium-voltage circuit design and can withstand a certain degree of voltage fluctuation.
4. **Gate voltage (VGS)**: ±20V
- Supporting a gate-source voltage of ±20V provides design flexibility and ensures the stability of the MOSFET under different operating conditions.
5. **Threshold Voltage (Vth)**: 1.7V
- The low threshold voltage of 1.7V allows the device to be turned on smoothly at a lower gate voltage, improving the device's response speed and sensitivity.
6. **On-resistance (RDS(ON))**:
- **12mΩ @ VGS=4.5V**
- **11mΩ @ VGS=10V**
- Low on-resistance helps reduce power loss and improve the overall efficiency of the circuit, especially suitable for high current applications.
7. **Drain Current (ID)**: 75A
- Capable of handling up to 75A of continuous current, it is very suitable for high current power and load applications.
8. **Technology Type**: Trench
- Trench technology improves conductivity, reduces switching losses, and optimizes overall performance and efficiency.
Domain and module applications：
III. Application fields and module examples
1. **Power converter**
- In DC-DC converters and AC-DC adapters, the high current handling capability and low on-resistance of HUFA76437S3S-VB make it an ideal switching element, which can significantly improve conversion efficiency and power supply stability.
2. **Motor control**
- This MOSFET can be widely used in motor drive circuits, such as electric vehicles and industrial motor control systems. Its high current capability and fast switching characteristics ensure stable operation of the motor under high load conditions.
3. **Power amplifier**
- In audio amplifiers and RF power amplifiers, the high current capability and low power loss characteristics of HUFA76437S3S-VB can effectively drive the load and provide stable amplification effects, which is suitable for power amplifier applications requiring high efficiency.
4. **Battery management system**
- In battery management systems, this MOSFET can be used for battery switching control and overcurrent protection. Its low on-resistance and high current handling capability improve system safety and efficiency, ensuring reliable battery operation.
The high current capability, low on-resistance and trench technology of the HUFA76437S3S-VB enable it to excel in power management, motor control, power amplifiers and battery management, making it a key device in high-performance electronic design.
1. **Power converter**
- In DC-DC converters and AC-DC adapters, the high current handling capability and low on-resistance of HUFA76437S3S-VB make it an ideal switching element, which can significantly improve conversion efficiency and power supply stability.
2. **Motor control**
- This MOSFET can be widely used in motor drive circuits, such as electric vehicles and industrial motor control systems. Its high current capability and fast switching characteristics ensure stable operation of the motor under high load conditions.
3. **Power amplifier**
- In audio amplifiers and RF power amplifiers, the high current capability and low power loss characteristics of HUFA76437S3S-VB can effectively drive the load and provide stable amplification effects, which is suitable for power amplifier applications requiring high efficiency.
4. **Battery management system**
- In battery management systems, this MOSFET can be used for battery switching control and overcurrent protection. Its low on-resistance and high current handling capability improve system safety and efficiency, ensuring reliable battery operation.
The high current capability, low on-resistance and trench technology of the HUFA76437S3S-VB enable it to excel in power management, motor control, power amplifiers and battery management, making it a key device in high-performance electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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