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HUFA76437S3ST-VB Product details
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HUFA76437S3ST-VB MOSFET Product Introduction
HUFA76437S3ST-VB is a high-performance unipolar N-channel MOSFET that uses advanced Trench technology and is designed for high-efficiency, high-current applications. This MOSFET is packaged in a TO263 package and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage environments. Its threshold voltage (Vth) is 1.7V, ensuring reliable conduction even at lower gate voltages. The on-resistance (RDS(ON)) is 12mΩ at VGS=4.5V and 11mΩ at VGS=10V, providing extremely low power loss. Its maximum continuous drain current (ID) reaches 75A, enabling it to handle high current loads and is suitable for applications requiring high current and high power.
HUFA76437S3ST-VB is a high-performance unipolar N-channel MOSFET that uses advanced Trench technology and is designed for high-efficiency, high-current applications. This MOSFET is packaged in a TO263 package and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage environments. Its threshold voltage (Vth) is 1.7V, ensuring reliable conduction even at lower gate voltages. The on-resistance (RDS(ON)) is 12mΩ at VGS=4.5V and 11mΩ at VGS=10V, providing extremely low power loss. Its maximum continuous drain current (ID) reaches 75A, enabling it to handle high current loads and is suitable for applications requiring high current and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- The TO263 package is a compact package type that provides excellent heat dissipation and is suitable for high power MOSFET applications. The package enables the MOSFET to dissipate heat effectively while providing efficient electrical performance in a limited space.
- **Configuration**: Unipolar N-channel
- This MOSFET is a unipolar N-channel type with low on-resistance and high switching speed, which is very suitable for high current and high frequency application scenarios.
- **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, which means the maximum voltage that the MOSFET can withstand between the drain and the source. Suitable for medium voltage power management and power control applications.
- **VGS (gate-source voltage)**: ±20V
- The maximum voltage between the gate and the source is ±20V, which provides a flexible gate drive voltage range, allowing the MOSFET to work stably under a variety of driving conditions.
- **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is 1.7V, which indicates the minimum gate-source voltage required for the MOSFET to turn on. The lower Vth enables the device to turn on at a lower gate voltage, suitable for low voltage control applications.
- **RDS(ON)（On-Resistance）**: 12mΩ @ VGS=4.5V
- The on-resistance is 12mΩ at a gate voltage of 4.5V. The lower RDS(ON) helps reduce power loss and improve efficiency.
- **RDS(ON)（On-Resistance）**: 11mΩ @ VGS=10V
- The on-resistance is 11mΩ at a gate voltage of 10V, providing further performance to reduce power loss.
- **ID (Continuous Drain Current)**: 75A
- The maximum continuous drain current is 75A, which represents the maximum current that the MOSFET can handle in the on state. This high current capability makes it suitable for high-power applications.
- **Technology**: Trench
- Trench technology enables low on-resistance and fast switching speeds, improving the overall performance of the MOSFET, making it suitable for applications requiring high efficiency and high density.
- **Package**: TO263
- The TO263 package is a compact package type that provides excellent heat dissipation and is suitable for high power MOSFET applications. The package enables the MOSFET to dissipate heat effectively while providing efficient electrical performance in a limited space.
- **Configuration**: Unipolar N-channel
- This MOSFET is a unipolar N-channel type with low on-resistance and high switching speed, which is very suitable for high current and high frequency application scenarios.
- **VDS (drain-source voltage)**: 60V
- The maximum drain-source voltage is 60V, which means the maximum voltage that the MOSFET can withstand between the drain and the source. Suitable for medium voltage power management and power control applications.
- **VGS (gate-source voltage)**: ±20V
- The maximum voltage between the gate and the source is ±20V, which provides a flexible gate drive voltage range, allowing the MOSFET to work stably under a variety of driving conditions.
- **Vth（Threshold Voltage）**: 1.7V
- The threshold voltage is 1.7V, which indicates the minimum gate-source voltage required for the MOSFET to turn on. The lower Vth enables the device to turn on at a lower gate voltage, suitable for low voltage control applications.
- **RDS(ON)（On-Resistance）**: 12mΩ @ VGS=4.5V
- The on-resistance is 12mΩ at a gate voltage of 4.5V. The lower RDS(ON) helps reduce power loss and improve efficiency.
- **RDS(ON)（On-Resistance）**: 11mΩ @ VGS=10V
- The on-resistance is 11mΩ at a gate voltage of 10V, providing further performance to reduce power loss.
- **ID (Continuous Drain Current)**: 75A
- The maximum continuous drain current is 75A, which represents the maximum current that the MOSFET can handle in the on state. This high current capability makes it suitable for high-power applications.
- **Technology**: Trench
- Trench technology enables low on-resistance and fast switching speeds, improving the overall performance of the MOSFET, making it suitable for applications requiring high efficiency and high density.
Domain and module applications：
Application Examples
HUFA76437S3ST-VB MOSFET is suitable for use in multiple fields and modules due to its high current and low on-resistance.
1. **High-efficiency power management**: In DC-DC converters and switching power supplies, the 60V drain-source voltage and low on-resistance of HUFA76437S3ST-VB enable it to efficiently handle current, thereby improving power conversion efficiency and system stability. It is suitable for computer power supplies, industrial power supplies, etc.
2. **Motor control**: Suitable for high-current motor drive applications, especially in situations where 75A high current needs to be handled. This MOSFET can provide stable current during motor startup and operation, ensuring efficient and reliable operation of the motor. It is widely used in power tools, electric vehicles and other fields.
3. **Battery management system**: In battery management and charging systems, HUFA76437S3ST-VB can be used as a switch control to optimize the battery charging and discharging process. Its low on-resistance helps reduce energy loss and improve the efficiency of the battery system, and is suitable for portable devices, electric vehicles and other fields.
4. **LED drive**: In high-power LED drive circuits, this MOSFET can be used to provide stable current control. Low on-resistance helps reduce power loss and improve the brightness and life of LEDs, and is commonly used in high-brightness LED lighting systems and displays.
In short, HUFA76437S3ST-VB is a high-efficiency, high-current handling MOSFET suitable for various medium voltage and high current applications, providing excellent power management and switching performance.
HUFA76437S3ST-VB MOSFET is suitable for use in multiple fields and modules due to its high current and low on-resistance.
1. **High-efficiency power management**: In DC-DC converters and switching power supplies, the 60V drain-source voltage and low on-resistance of HUFA76437S3ST-VB enable it to efficiently handle current, thereby improving power conversion efficiency and system stability. It is suitable for computer power supplies, industrial power supplies, etc.
2. **Motor control**: Suitable for high-current motor drive applications, especially in situations where 75A high current needs to be handled. This MOSFET can provide stable current during motor startup and operation, ensuring efficient and reliable operation of the motor. It is widely used in power tools, electric vehicles and other fields.
3. **Battery management system**: In battery management and charging systems, HUFA76437S3ST-VB can be used as a switch control to optimize the battery charging and discharging process. Its low on-resistance helps reduce energy loss and improve the efficiency of the battery system, and is suitable for portable devices, electric vehicles and other fields.
4. **LED drive**: In high-power LED drive circuits, this MOSFET can be used to provide stable current control. Low on-resistance helps reduce power loss and improve the brightness and life of LEDs, and is commonly used in high-brightness LED lighting systems and displays.
In short, HUFA76437S3ST-VB is a high-efficiency, high-current handling MOSFET suitable for various medium voltage and high current applications, providing excellent power management and switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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