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HUFA76429S3ST-VB Product details

Product introduction:

Product Introduction

HUFA76429S3ST-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed for high current and medium voltage applications and has excellent electrical performance. The maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V. The gate threshold voltage (Vth) of this MOSFET is 1.7V, and it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 32mΩ (@VGS=10V) and 35mΩ (@VGS=4.5V) at different gate voltages, which enables it to maintain good conduction performance under low voltage driving conditions. HUFA76429S3ST-VB is manufactured using Trench technology and has a maximum drain current (ID) of 50A, making it suitable for applications that require high current handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and modules

HUFA76429S3ST-VB MOSFET is suitable for use in multiple fields and modules due to its excellent electrical characteristics and high current handling capability, including:

1. **Power management system**: In high-efficiency power conversion and management systems such as DC-DC converters and switching power supplies (SMPS), this MOSFET can effectively control the flow of current, improve conversion efficiency, and reduce power loss. Its low on-resistance makes it suitable for use in applications that require high current loads.

2. **Electric Vehicles (EV)**: This MOSFET can be used in the battery management system (BMS) and electric drive system of electric vehicles to help manage the battery charging and discharging process, provide efficient current control and thermal management, and ensure the stability and reliability of the system.

3. **Motor driver**: In motor drive applications, HUFA76429S3ST-VB is able to handle high current demands and provide stable current control, suitable for various motor control modules such as stepper motor drivers and DC motor drivers.

4. **Consumer Electronics Devices**: In high-power consumer electronics devices, such as high-power LED lighting and high-efficiency home appliances, this MOSFET can be used for power switching and power management to optimize the performance and energy efficiency of the device.

These application examples show that HUFA76429S3ST-VB performs well in a variety of scenarios that require high current and high-efficiency power control, and can effectively meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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