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HUFA76423S3ST-VB Product details
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Product Introduction: HUFA76423S3ST-VB
HUFA76423S3ST-VB is a high-efficiency N-channel MOSFET packaged in TO263. With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 50A, this MOSFET is ideal for applications that require efficient switching and stable conduction performance. It uses trench technology to optimize switching speed and reduce power consumption. The low on-resistance (RDS(ON)) of the MOSFET makes it excel in various power management and circuit protection applications.
HUFA76423S3ST-VB is a high-efficiency N-channel MOSFET packaged in TO263. With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 50A, this MOSFET is ideal for applications that require efficient switching and stable conduction performance. It uses trench technology to optimize switching speed and reduce power consumption. The low on-resistance (RDS(ON)) of the MOSFET makes it excel in various power management and circuit protection applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
HUFA76423S3ST-VB MOSFET is suitable for the following fields and modules due to its excellent electrical characteristics and low on-resistance:
1. **DC-DC converter**: In DC-DC converters, MOSFET needs to handle relatively high current and voltage. The low on-resistance and high current capability of HUFA76423S3ST-VB enable it to effectively improve conversion efficiency and reduce energy loss.
2. **Power management system**: This MOSFET can efficiently switch current in power management systems and is suitable for various power modules and battery management systems (BMS) to ensure system stability and efficiency.
3. **Electric vehicle control system**: Due to its high current handling capability and low on-resistance, HUFA76423S3ST-VB is suitable for battery control and motor drive systems in electric vehicles, providing reliable performance and efficiency.
4. **Power LED driver**: In high-power LED driver circuits, the low on-resistance of MOSFET can effectively reduce power consumption and heat, ensuring long life and stable operation of LED lamps.
5. **Switching power supply (SMPS)**: In switching power supply design, this MOSFET can handle high-frequency switching operations and is suitable for various switching power supply modules to help achieve high-efficiency power conversion.
Through these application examples, it can be seen that HUFA76423S3ST-VB MOSFET has a wide range of applicability in the fields of power management, power control and high-efficiency switching, and can provide stable and reliable performance.
HUFA76423S3ST-VB MOSFET is suitable for the following fields and modules due to its excellent electrical characteristics and low on-resistance:
1. **DC-DC converter**: In DC-DC converters, MOSFET needs to handle relatively high current and voltage. The low on-resistance and high current capability of HUFA76423S3ST-VB enable it to effectively improve conversion efficiency and reduce energy loss.
2. **Power management system**: This MOSFET can efficiently switch current in power management systems and is suitable for various power modules and battery management systems (BMS) to ensure system stability and efficiency.
3. **Electric vehicle control system**: Due to its high current handling capability and low on-resistance, HUFA76423S3ST-VB is suitable for battery control and motor drive systems in electric vehicles, providing reliable performance and efficiency.
4. **Power LED driver**: In high-power LED driver circuits, the low on-resistance of MOSFET can effectively reduce power consumption and heat, ensuring long life and stable operation of LED lamps.
5. **Switching power supply (SMPS)**: In switching power supply design, this MOSFET can handle high-frequency switching operations and is suitable for various switching power supply modules to help achieve high-efficiency power conversion.
Through these application examples, it can be seen that HUFA76423S3ST-VB MOSFET has a wide range of applicability in the fields of power management, power control and high-efficiency switching, and can provide stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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