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HUFA76419S3ST-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HUFA76419S3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-263. The device uses advanced Trench technology to provide excellent electrical performance, including low on-resistance and high current carrying capacity. Due to its low on-resistance and wide gate-source voltage range, HUFA76419S3ST-VB performs well in various power conversion and switching applications and is an ideal choice for high-efficiency electronic designs.
**HUFA76419S3ST-VB** is a high-performance N-channel power MOSFET packaged in TO-263. The device uses advanced Trench technology to provide excellent electrical performance, including low on-resistance and high current carrying capacity. Due to its low on-resistance and wide gate-source voltage range, HUFA76419S3ST-VB performs well in various power conversion and switching applications and is an ideal choice for high-efficiency electronic designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
1. **Package type (Package)**: TO-263
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
7. **Drain current (ID)**: 50A
8. **Technology (Technology)**: Trench technology
1. **Package type (Package)**: TO-263
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
7. **Drain current (ID)**: 50A
8. **Technology (Technology)**: Trench technology
Domain and module applications：
3. Application fields and module examples
**HUFA76419S3ST-VB** MOSFET is suitable for multiple high-performance electronic modules and applications due to its low on-resistance and high current capability, including:
1. **High-efficiency switching power supply (SMPS)**: This MOSFET is suitable for use in high-efficiency switching power supply modules, which can reduce conduction losses while improving overall system efficiency. It is suitable for computer power supplies and industrial power supply equipment.
2. **Power tools**: In power tools, the high current carrying capacity of HUFA76419S3ST-VB enables it to stably control the operation of the motor, enhancing the performance and reliability of the tool.
3. **LED drive circuit**: In LED lighting systems, this MOSFET can effectively control the LED drive current, improve the efficiency and life of the light source, and is suitable for power management of LED lamps.
4. **Battery Management System (BMS)**: In the battery management system, this MOSFET can achieve efficient charging and discharging control, optimize the efficiency and safety of the battery, and is suitable for use in electric vehicles and energy storage systems.
Through these application scenarios, HUFA76419S3ST-VB MOSFET demonstrates its advantages in various high-efficiency power management and switching applications, especially in environments that require high current and low conduction loss.
**HUFA76419S3ST-VB** MOSFET is suitable for multiple high-performance electronic modules and applications due to its low on-resistance and high current capability, including:
1. **High-efficiency switching power supply (SMPS)**: This MOSFET is suitable for use in high-efficiency switching power supply modules, which can reduce conduction losses while improving overall system efficiency. It is suitable for computer power supplies and industrial power supply equipment.
2. **Power tools**: In power tools, the high current carrying capacity of HUFA76419S3ST-VB enables it to stably control the operation of the motor, enhancing the performance and reliability of the tool.
3. **LED drive circuit**: In LED lighting systems, this MOSFET can effectively control the LED drive current, improve the efficiency and life of the light source, and is suitable for power management of LED lamps.
4. **Battery Management System (BMS)**: In the battery management system, this MOSFET can achieve efficient charging and discharging control, optimize the efficiency and safety of the battery, and is suitable for use in electric vehicles and energy storage systems.
Through these application scenarios, HUFA76419S3ST-VB MOSFET demonstrates its advantages in various high-efficiency power management and switching applications, especially in environments that require high current and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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