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HUFA75842S3ST-VB Product details
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1. HUFA75842S3ST-VB Product Introduction
HUFA75842S3ST-VB is a high-performance single N-channel MOSFET in TO-263 package. This device has high withstand voltage (150V) and low on-resistance (35mΩ@VGS=10V), suitable for high voltage and high current applications. Its low gate drive voltage and excellent conductivity make it perform well in various power switches, inverters and motor drive applications. With its trench technology, HUFA75842S3ST-VB has significant advantages in high performance and reliability.
HUFA75842S3ST-VB is a high-performance single N-channel MOSFET in TO-263 package. This device has high withstand voltage (150V) and low on-resistance (35mΩ@VGS=10V), suitable for high voltage and high current applications. Its low gate drive voltage and excellent conductivity make it perform well in various power switches, inverters and motor drive applications. With its trench technology, HUFA75842S3ST-VB has significant advantages in high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. HUFA75842S3ST-VB Detailed parameter description
1. **Package type**: TO-263
- The TO-263 package is compact and suitable for applications with limited space, while providing good heat dissipation performance and supporting high-power working environments.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET very suitable for various switching and amplification applications, with excellent switching speed and efficiency.
3. **Drain-source voltage (VDS)**: 150V
- The maximum drain-source voltage is 150V, which is suitable for high-voltage applications and can meet the needs of a variety of high-voltage circuits.
4. **Gate voltage (VGS)**: ±20V
- The allowable gate-source voltage range is ±20V, providing design flexibility and ensuring device reliability.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage is suitable for low and medium voltage drive applications, ensuring that the MOSFET can be turned on even at low gate voltages.
6. **On-resistance (RDS(ON))**: 35mΩ @ VGS=10V
- Low on-resistance helps reduce power losses and improves overall system efficiency.
7. **Drain Current (ID)**: 45A
- Able to handle up to 45A of continuous current, suitable for applications requiring high current.
8. **Technology Type**: Trench
- Trench technology improves conduction efficiency and reduces gate charge, resulting in lower switching losses and improved performance.
1. **Package type**: TO-263
- The TO-263 package is compact and suitable for applications with limited space, while providing good heat dissipation performance and supporting high-power working environments.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET very suitable for various switching and amplification applications, with excellent switching speed and efficiency.
3. **Drain-source voltage (VDS)**: 150V
- The maximum drain-source voltage is 150V, which is suitable for high-voltage applications and can meet the needs of a variety of high-voltage circuits.
4. **Gate voltage (VGS)**: ±20V
- The allowable gate-source voltage range is ±20V, providing design flexibility and ensuring device reliability.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage is suitable for low and medium voltage drive applications, ensuring that the MOSFET can be turned on even at low gate voltages.
6. **On-resistance (RDS(ON))**: 35mΩ @ VGS=10V
- Low on-resistance helps reduce power losses and improves overall system efficiency.
7. **Drain Current (ID)**: 45A
- Able to handle up to 45A of continuous current, suitable for applications requiring high current.
8. **Technology Type**: Trench
- Trench technology improves conduction efficiency and reduces gate charge, resulting in lower switching losses and improved performance.
Domain and module applications：
3. Application fields and module examples
1. **Power converter**
- In DC-DC converters and AC-DC adapters, the high voltage and high current capabilities of HUFA75842S3ST-VB make it an ideal switching element. Its low on-resistance helps improve conversion efficiency and reduce power loss.
2. **Inverter**
- In solar inverters or wind power inverters, this MOSFET can be used as a high-voltage and high-current switching element to support efficient power conversion and stable system operation.
3. **Motor control**
- HUFA75842S3ST-VB can be used in motor drive circuits, especially in applications requiring high current and high voltage, such as electric vehicles and industrial motor drive systems. Its excellent switching characteristics and high current carrying capacity ensure reliable operation of the motor.
4. **Battery management system**
- In battery management systems, this MOSFET can be used for battery switch control and overcurrent protection. Its high voltage withstand capability and low on-resistance ensure the safety and high efficiency of the system.
The high voltage, high current characteristics and trench technology of HUFA75842S3ST-VB enable it to perform well in various high-performance power management and power conversion applications, and is widely used in electronic designs that require high efficiency and high reliability.
1. **Power converter**
- In DC-DC converters and AC-DC adapters, the high voltage and high current capabilities of HUFA75842S3ST-VB make it an ideal switching element. Its low on-resistance helps improve conversion efficiency and reduce power loss.
2. **Inverter**
- In solar inverters or wind power inverters, this MOSFET can be used as a high-voltage and high-current switching element to support efficient power conversion and stable system operation.
3. **Motor control**
- HUFA75842S3ST-VB can be used in motor drive circuits, especially in applications requiring high current and high voltage, such as electric vehicles and industrial motor drive systems. Its excellent switching characteristics and high current carrying capacity ensure reliable operation of the motor.
4. **Battery management system**
- In battery management systems, this MOSFET can be used for battery switch control and overcurrent protection. Its high voltage withstand capability and low on-resistance ensure the safety and high efficiency of the system.
The high voltage, high current characteristics and trench technology of HUFA75842S3ST-VB enable it to perform well in various high-performance power management and power conversion applications, and is widely used in electronic designs that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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