中文
English
HUFA75652G3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**HUFA75652G3-VB** is a high-performance N-channel power MOSFET packaged in TO-247, suitable for high current and high power applications. The device uses advanced trench technology to provide lower on-resistance (RDS(ON)) and higher current carrying capacity, making it perform well in a variety of high-efficiency power management and switching applications.
**HUFA75652G3-VB** is a high-performance N-channel power MOSFET packaged in TO-247, suitable for high current and high power applications. The device uses advanced trench technology to provide lower on-resistance (RDS(ON)) and higher current carrying capacity, making it perform well in a variety of high-efficiency power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description
1. **Package type (Package)**: TO-247
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology (Technology)**: Trench technology
1. **Package type (Package)**: TO-247
2. **Polarity (Configuration)**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology (Technology)**: Trench technology
Domain and module applications：
3. Application fields and module examples
**HUFA75652G3-VB** MOSFET has high current handling capability and low on-resistance, suitable for application in the following fields and modules:
1. **Electric vehicle (EV) drive system**: Due to its high current capability and low conduction loss, this MOSFET can be used in electric vehicle drive motor control modules to help improve system efficiency and reduce energy loss.
2. **Solar inverter**: In solar photovoltaic systems, this device can be used in inverter modules to improve the overall efficiency of the system through efficient power conversion.
3. **Switching power supply (SMPS)**: HUFA75652G3-VB is suitable for use in efficient switching power supply modules, especially in industrial power supplies that require high current output to reduce power consumption and improve conversion efficiency.
4. **Battery management system (BMS)**: In high-power battery pack management, this MOSFET can provide efficient charge and discharge control to help extend battery life and improve safety.
Through these application scenarios, HUFA75652G3-VB demonstrates its wide applicability in high-performance power electronic equipment, especially in areas requiring efficient energy conversion and management.
**HUFA75652G3-VB** MOSFET has high current handling capability and low on-resistance, suitable for application in the following fields and modules:
1. **Electric vehicle (EV) drive system**: Due to its high current capability and low conduction loss, this MOSFET can be used in electric vehicle drive motor control modules to help improve system efficiency and reduce energy loss.
2. **Solar inverter**: In solar photovoltaic systems, this device can be used in inverter modules to improve the overall efficiency of the system through efficient power conversion.
3. **Switching power supply (SMPS)**: HUFA75652G3-VB is suitable for use in efficient switching power supply modules, especially in industrial power supplies that require high current output to reduce power consumption and improve conversion efficiency.
4. **Battery management system (BMS)**: In high-power battery pack management, this MOSFET can provide efficient charge and discharge control to help extend battery life and improve safety.
Through these application scenarios, HUFA75652G3-VB demonstrates its wide applicability in high-performance power electronic equipment, especially in areas requiring efficient energy conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
