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HUFA75639S3ST-VB Product details
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HUFA75639S3ST-VB MOSFET Product Introduction
HUFA75639S3ST-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET has excellent on-resistance performance and high current handling capability, and is particularly suitable for applications such as high-performance switching power supplies and motor control. It has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) of ±20V. The optimized Trench technology greatly reduces the on-resistance and power loss, ensuring reliable performance under high current conditions.
HUFA75639S3ST-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET has excellent on-resistance performance and high current handling capability, and is particularly suitable for applications such as high-performance switching power supplies and motor control. It has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) of ±20V. The optimized Trench technology greatly reduces the on-resistance and power loss, ensuring reliable performance under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUFA75639S3ST-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**: 20mΩ @ VGS=10V
- **Drain current(ID)**: 70A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**: 20mΩ @ VGS=10V
- **Drain current(ID)**: 70A
- **Technology**: Trench
Domain and module applications：
HUFA75639S3ST-VB MOSFET Applications and Modules
1. **Switching Power Supplies**: HUFA75639S3ST-VB MOSFET is widely used in switching power supply modules. Its high current handling capability and low on-resistance characteristics ensure reduced power loss and improved efficiency during high-efficiency power conversion.
2. **Motor Drives**: This MOSFET performs well in motor drive control modules, especially for applications that require precise control of current and voltage. Its high current capability and fast switching speed can meet the control requirements of different types of motors.
3. **Battery Management Systems**: In battery management systems, HUFA75639S3ST-VB MOSFET can achieve efficient current transmission and energy management, and is suitable for battery protection and charge and discharge management in electric vehicles and energy storage devices.
4. **DC-DC Converters**: Its low RDS(ON) characteristics enable stable voltage conversion with lower power loss in DC-DC converters, making it suitable for modules with high voltage accuracy requirements such as communication equipment and power tools.
These application areas make full use of the high current capability and low on-resistance of HUFA75639S3ST-VB, making it an ideal choice for high-performance and high-reliability power electronic modules.
1. **Switching Power Supplies**: HUFA75639S3ST-VB MOSFET is widely used in switching power supply modules. Its high current handling capability and low on-resistance characteristics ensure reduced power loss and improved efficiency during high-efficiency power conversion.
2. **Motor Drives**: This MOSFET performs well in motor drive control modules, especially for applications that require precise control of current and voltage. Its high current capability and fast switching speed can meet the control requirements of different types of motors.
3. **Battery Management Systems**: In battery management systems, HUFA75639S3ST-VB MOSFET can achieve efficient current transmission and energy management, and is suitable for battery protection and charge and discharge management in electric vehicles and energy storage devices.
4. **DC-DC Converters**: Its low RDS(ON) characteristics enable stable voltage conversion with lower power loss in DC-DC converters, making it suitable for modules with high voltage accuracy requirements such as communication equipment and power tools.
These application areas make full use of the high current capability and low on-resistance of HUFA75639S3ST-VB, making it an ideal choice for high-performance and high-reliability power electronic modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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