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HUFA75639G3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
HUFA75639G3-VB is a high-performance single-channel N-channel power MOSFET manufactured using advanced trench technology and packaged in TO-247. This device has excellent electrical performance and reliability, and is particularly suitable for high-efficiency and high-power applications. Its low on-resistance (RDS(ON)) and high current carrying capacity enable it to perform well in various power electronic systems. HUFA75639G3-VB is designed to provide stable performance in harsh working environments and is an ideal choice for industrial automation, power management, automotive electronics and other fields.
HUFA75639G3-VB is a high-performance single-channel N-channel power MOSFET manufactured using advanced trench technology and packaged in TO-247. This device has excellent electrical performance and reliability, and is particularly suitable for high-efficiency and high-power applications. Its low on-resistance (RDS(ON)) and high current carrying capacity enable it to perform well in various power electronic systems. HUFA75639G3-VB is designed to provide stable performance in harsh working environments and is an ideal choice for industrial automation, power management, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Model**: HUFA75639G3-VB
- **Package**: TO-247
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 72A
- **Process technology**: Trench
**Parameter analysis**:
- **Package (TO-247)**: Provides good heat dissipation performance, suitable for high-power applications.
- **Single channel N-channel**: Suitable for most power control circuits, with fast switching characteristics.
- **Drain-source voltage (VDS) 100V**: Able to withstand voltages between the drain and source up to 100V, suitable for medium and high voltage applications.
- **Gate-source voltage (VGS) ±20V**: Allows a wider gate-source control voltage range, providing greater design flexibility.
- **Threshold voltage (Vth) 1.8V**: Lower threshold voltage helps achieve efficient switching at lower control voltages.
- **On-resistance (RDS(ON)) 18mΩ @ VGS=10V**: Extremely low on-resistance reduces power loss and improves overall efficiency.
- **Drain current (ID) 72A**: High current carrying capacity, suitable for high current applications.
- **Trench technology**: Improves the switching speed and thermal performance of the device and enhances reliability.
- **Model**: HUFA75639G3-VB
- **Package**: TO-247
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 72A
- **Process technology**: Trench
**Parameter analysis**:
- **Package (TO-247)**: Provides good heat dissipation performance, suitable for high-power applications.
- **Single channel N-channel**: Suitable for most power control circuits, with fast switching characteristics.
- **Drain-source voltage (VDS) 100V**: Able to withstand voltages between the drain and source up to 100V, suitable for medium and high voltage applications.
- **Gate-source voltage (VGS) ±20V**: Allows a wider gate-source control voltage range, providing greater design flexibility.
- **Threshold voltage (Vth) 1.8V**: Lower threshold voltage helps achieve efficient switching at lower control voltages.
- **On-resistance (RDS(ON)) 18mΩ @ VGS=10V**: Extremely low on-resistance reduces power loss and improves overall efficiency.
- **Drain current (ID) 72A**: High current carrying capacity, suitable for high current applications.
- **Trench technology**: Improves the switching speed and thermal performance of the device and enhances reliability.
Domain and module applications：
3. Application fields and module examples
HUFA75639G3-VB is widely used in many fields and modules due to its excellent electrical performance and high reliability. For example:
1. **Power management module**: In switching power supplies and DC-DC converters, HUFA75639G3-VB can be used as the main power switching device to effectively reduce conduction losses and improve conversion efficiency.
2. **Industrial automation equipment**: In motor drive and inverter systems, this MOSFET can handle high current demands to ensure stable operation and efficient control of equipment.
3. **Automotive electronic system**: Used in power control modules and charging systems for electric vehicles, it provides reliable high current switching functions, supports fast charging and efficient energy management.
4. **Renewable energy system**: In solar inverters and wind power generation controllers, HUFA75639G3-VB can efficiently convert and manage power and improve the overall performance of the system.
5. **Consumer Electronics**: In high-performance power adapters and battery management systems, ensure stable current supply and efficient energy conversion to extend the life of the device.
From the above application examples, it can be seen that HUFA75639G3-VB is an indispensable key component in various systems that require efficient energy conversion and stable current control.
HUFA75639G3-VB is widely used in many fields and modules due to its excellent electrical performance and high reliability. For example:
1. **Power management module**: In switching power supplies and DC-DC converters, HUFA75639G3-VB can be used as the main power switching device to effectively reduce conduction losses and improve conversion efficiency.
2. **Industrial automation equipment**: In motor drive and inverter systems, this MOSFET can handle high current demands to ensure stable operation and efficient control of equipment.
3. **Automotive electronic system**: Used in power control modules and charging systems for electric vehicles, it provides reliable high current switching functions, supports fast charging and efficient energy management.
4. **Renewable energy system**: In solar inverters and wind power generation controllers, HUFA75639G3-VB can efficiently convert and manage power and improve the overall performance of the system.
5. **Consumer Electronics**: In high-performance power adapters and battery management systems, ensure stable current supply and efficient energy conversion to extend the life of the device.
From the above application examples, it can be seen that HUFA75639G3-VB is an indispensable key component in various systems that require efficient energy conversion and stable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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